Diffusion Enhancement in Highly Excited MAPbI3 Perovskite Layers with Additives

Patrik Ščajev, Chuanjiang Qin, Ramunas Aleksiejunas, Paulius Baronas, Saulius Miasojedovas, Takashi Fujihara, Toshinori Matsushima, Chihaya Adachi, Saulius Juršėnas

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

Carrier mobility is one of the crucial parameters determining the electronic device performance. We apply the light-induced transient grating technique to measure independently the carrier diffusion coefficient and lifetime, and to reveal the impact of additives on carrier transport properties in wet-cast CH3NH3PbI3 (MAPbI3) perovskite films. We use the high excitation regime, where diffusion length of carriers is controlled purely by carrier diffusion and not by the lifetime. We demonstrate a four-fold increase in diffusion coefficient due to the reduction of localization center density by additives; however, the density dependence analysis shows the dominance of localization-limited diffusion regime. The presented approach allows us to estimate the limits of technological improvement - carrier diffusion coefficient in wet-cast layers can be expected to be enhanced by up to one order of magnitude.

Original languageEnglish
Pages (from-to)3167-3172
Number of pages6
JournalJournal of Physical Chemistry Letters
Volume9
Issue number12
DOIs
Publication statusPublished - Jun 21 2018

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Physical and Theoretical Chemistry

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