Diffusion of electrically-active cobalt in silicon

Kouji Hashimoto, Hiroshi Nakashima, Kimio Hashimoto

    Research output: Contribution to journalArticlepeer-review

    5 Citations (Scopus)

    Abstract

    The annealing of supersaturated cobalt in silicon was studied by measuring the cobalt concentration as a function of the annealing time. The diffusion of electrically-active cobalt in silicon is governed by the interstitial cobalt concentration.

    Original languageEnglish
    Pages (from-to)1776-1777
    Number of pages2
    JournalJapanese Journal of Applied Physics
    Volume27
    Issue number9 R
    DOIs
    Publication statusPublished - Sep 1988

    All Science Journal Classification (ASJC) codes

    • Engineering(all)
    • Physics and Astronomy(all)

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