Abstract
The diffusion profiles of vanadium in silicon have been investigated. In the temperature range 950-1200°C an in-depth profile measurement by deep level transient spectroscopy was used, and in the temperature range 600-800°C an annealing experiment which employed a technique for profiling the concentration of deep levels within a depletion region was used. From the two kinds of concentration-profile measurements, the diffusion coefficient of interstitial vanadium in silicon was determined, and it is represented by the expression DV= 9.0×10-3 exp(-1.55/kT) cm2 s-1.
Original language | English |
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Pages (from-to) | 1653-1655 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 58 |
Issue number | 15 |
DOIs | |
Publication status | Published - Dec 1 1991 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)