Diffusion of vanadium in silicon

Taizoh Sadoh; Hiroshi Nakashima

doi:10.1063/1.105154

Diffusion of vanadium in silicon

Taizoh Sadoh, Hiroshi Nakashima

Electronic Devices

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Abstract

The diffusion profiles of vanadium in silicon have been investigated. In the temperature range 950-1200°C an in-depth profile measurement by deep level transient spectroscopy was used, and in the temperature range 600-800°C an annealing experiment which employed a technique for profiling the concentration of deep levels within a depletion region was used. From the two kinds of concentration-profile measurements, the diffusion coefficient of interstitial vanadium in silicon was determined, and it is represented by the expression D_V= 9.0×10^-3 exp(-1.55/kT) cm² s^-1.

Original language	English
Pages (from-to)	1653-1655
Number of pages	3
Journal	Applied Physics Letters
Volume	58
Issue number	15
DOIs	https://doi.org/10.1063/1.105154
Publication status	Published - Dec 1 1991

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.105154

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AB - The diffusion profiles of vanadium in silicon have been investigated. In the temperature range 950-1200°C an in-depth profile measurement by deep level transient spectroscopy was used, and in the temperature range 600-800°C an annealing experiment which employed a technique for profiling the concentration of deep levels within a depletion region was used. From the two kinds of concentration-profile measurements, the diffusion coefficient of interstitial vanadium in silicon was determined, and it is represented by the expression DV= 9.0×10-3 exp(-1.55/kT) cm2 s-1.

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Diffusion of vanadium in silicon

Abstract

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