Diffusion of vanadium in silicon

Taizoh Sadoh; Hiroshi Nakashima

doi:10.1063/1.105154

Diffusion of vanadium in silicon

Taizoh Sadoh, Hiroshi Nakashima

Electronic Devices

Research output: Contribution to journal › Article

25 Citations (Scopus)

Abstract

The diffusion profiles of vanadium in silicon have been investigated. In the temperature range 950-1200°C an in-depth profile measurement by deep level transient spectroscopy was used, and in the temperature range 600-800°C an annealing experiment which employed a technique for profiling the concentration of deep levels within a depletion region was used. From the two kinds of concentration-profile measurements, the diffusion coefficient of interstitial vanadium in silicon was determined, and it is represented by the expression D_V= 9.0×10^-3 exp(-1.55/kT) cm² s^-1.

Original language	English
Pages (from-to)	1653-1655
Number of pages	3
Journal	Applied Physics Letters
Volume	58
Issue number	15
DOIs	https://doi.org/10.1063/1.105154
Publication status	Published - Dec 1 1991

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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Sadoh, T., & Nakashima, H. (1991). Diffusion of vanadium in silicon. Applied Physics Letters, 58(15), 1653-1655. https://doi.org/10.1063/1.105154

@article{0bb854aaf6c54e41b360ded8afb4828b,

title = "Diffusion of vanadium in silicon",

abstract = "The diffusion profiles of vanadium in silicon have been investigated. In the temperature range 950-1200°C an in-depth profile measurement by deep level transient spectroscopy was used, and in the temperature range 600-800°C an annealing experiment which employed a technique for profiling the concentration of deep levels within a depletion region was used. From the two kinds of concentration-profile measurements, the diffusion coefficient of interstitial vanadium in silicon was determined, and it is represented by the expression DV= 9.0×10-3 exp(-1.55/kT) cm2 s-1.",

author = "Taizoh Sadoh and Hiroshi Nakashima",

year = "1991",

month = dec,

day = "1",

doi = "10.1063/1.105154",

language = "English",

volume = "58",

pages = "1653--1655",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "15",

}

TY - JOUR

T1 - Diffusion of vanadium in silicon

AU - Sadoh, Taizoh

AU - Nakashima, Hiroshi

PY - 1991/12/1

Y1 - 1991/12/1

N2 - The diffusion profiles of vanadium in silicon have been investigated. In the temperature range 950-1200°C an in-depth profile measurement by deep level transient spectroscopy was used, and in the temperature range 600-800°C an annealing experiment which employed a technique for profiling the concentration of deep levels within a depletion region was used. From the two kinds of concentration-profile measurements, the diffusion coefficient of interstitial vanadium in silicon was determined, and it is represented by the expression DV= 9.0×10-3 exp(-1.55/kT) cm2 s-1.

AB - The diffusion profiles of vanadium in silicon have been investigated. In the temperature range 950-1200°C an in-depth profile measurement by deep level transient spectroscopy was used, and in the temperature range 600-800°C an annealing experiment which employed a technique for profiling the concentration of deep levels within a depletion region was used. From the two kinds of concentration-profile measurements, the diffusion coefficient of interstitial vanadium in silicon was determined, and it is represented by the expression DV= 9.0×10-3 exp(-1.55/kT) cm2 s-1.

UR - http://www.scopus.com/inward/record.url?scp=0343251045&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0343251045&partnerID=8YFLogxK

U2 - 10.1063/1.105154

DO - 10.1063/1.105154

M3 - Article

AN - SCOPUS:0343251045

VL - 58

SP - 1653

EP - 1655

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 15

ER -