Diffusion of vanadium in silicon

Research output: Contribution to journalArticle

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Abstract

The diffusion profiles of vanadium in silicon have been investigated. In the temperature range 950-1200°C an in-depth profile measurement by deep level transient spectroscopy was used, and in the temperature range 600-800°C an annealing experiment which employed a technique for profiling the concentration of deep levels within a depletion region was used. From the two kinds of concentration-profile measurements, the diffusion coefficient of interstitial vanadium in silicon was determined, and it is represented by the expression DV= 9.0×10-3 exp(-1.55/kT) cm2 s-1.

Original languageEnglish
Pages (from-to)1653-1655
Number of pages3
JournalApplied Physics Letters
Volume58
Issue number15
DOIs
Publication statusPublished - Dec 1 1991

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vanadium
silicon
profiles
interstitials
depletion
diffusion coefficient
annealing
temperature
spectroscopy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Diffusion of vanadium in silicon. / Sadoh, Taizoh; Nakashima, Hiroshi.

In: Applied Physics Letters, Vol. 58, No. 15, 01.12.1991, p. 1653-1655.

Research output: Contribution to journalArticle

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