Abstract
The diffusion profiles of vanadium in silicon have been investigated. In the temperature range 950-1200°C an in-depth profile measurement by deep level transient spectroscopy was used, and in the temperature range 600-800°C an annealing experiment which employed a technique for profiling the concentration of deep levels within a depletion region was used. From the two kinds of concentration-profile measurements, the diffusion coefficient of interstitial vanadium in silicon was determined, and it is represented by the expression DV= 9.0×10-3 exp(-1.55/kT) cm2 s-1.
| Original language | English |
|---|---|
| Pages (from-to) | 1653-1655 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 58 |
| Issue number | 15 |
| DOIs | |
| Publication status | Published - Dec 1 1991 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
Cite this
Diffusion of vanadium in silicon. / Sadoh, Taizoh; Nakashima, Hiroshi.
In: Applied Physics Letters, Vol. 58, No. 15, 01.12.1991, p. 1653-1655.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Diffusion of vanadium in silicon
AU - Sadoh, Taizoh
AU - Nakashima, Hiroshi
PY - 1991/12/1
Y1 - 1991/12/1
N2 - The diffusion profiles of vanadium in silicon have been investigated. In the temperature range 950-1200°C an in-depth profile measurement by deep level transient spectroscopy was used, and in the temperature range 600-800°C an annealing experiment which employed a technique for profiling the concentration of deep levels within a depletion region was used. From the two kinds of concentration-profile measurements, the diffusion coefficient of interstitial vanadium in silicon was determined, and it is represented by the expression DV= 9.0×10-3 exp(-1.55/kT) cm2 s-1.
AB - The diffusion profiles of vanadium in silicon have been investigated. In the temperature range 950-1200°C an in-depth profile measurement by deep level transient spectroscopy was used, and in the temperature range 600-800°C an annealing experiment which employed a technique for profiling the concentration of deep levels within a depletion region was used. From the two kinds of concentration-profile measurements, the diffusion coefficient of interstitial vanadium in silicon was determined, and it is represented by the expression DV= 9.0×10-3 exp(-1.55/kT) cm2 s-1.
UR - http://www.scopus.com/inward/record.url?scp=0343251045&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0343251045&partnerID=8YFLogxK
U2 - 10.1063/1.105154
DO - 10.1063/1.105154
M3 - Article
AN - SCOPUS:0343251045
VL - 58
SP - 1653
EP - 1655
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 15
ER -