Dilute moment n-type ferromagnetic semiconductor Li(Zn,Mn)As

J. Mašek, J. Kudrnovský, F. MácA, B. L. Gallagher, R. P. Campion, D. H. Gregory, T. Jungwirth

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Abstract

We propose to replace Ga in (Ga,Mn)As with Li and Zn as a route to high Curie temperature, carrier mediated ferromagnetism in a dilute moment n-type semiconductor. Superior material characteristics, rendering Li(Zn,Mn)As a realistic candidate for such a system, include high solubility of the isovalent substitutional Mn impurity and carrier concentration controlled independently of Mn doping by adjusting Li-(Zn,Mn) stoichiometry. Our predictions are anchored by ab initio calculations and comparisons with the familiar and directly related (Ga,Mn)As, by the physical picture we provide for the exchange interaction between Mn local moments and electrons in the conduction band, and by analysis of prospects for the controlled growth of Li(Zn,Mn)As materials.

Original languageEnglish
Article number067202
JournalPhysical Review Letters
Volume98
Issue number6
DOIs
Publication statusPublished - Feb 7 2007

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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    Mašek, J., Kudrnovský, J., MácA, F., Gallagher, B. L., Campion, R. P., Gregory, D. H., & Jungwirth, T. (2007). Dilute moment n-type ferromagnetic semiconductor Li(Zn,Mn)As. Physical Review Letters, 98(6), [067202]. https://doi.org/10.1103/PhysRevLett.98.067202