Diode parameters of heterojunctions comprising p-type si substrate and n-type β-FeSi2 thin films

Nathaporn Promros, Suguru Funasaki, Motoki Takahara, Mahmoud Shaban, Tsuyoshi Yoshitake

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    N-Type β-FeSi2/p-type Si heterojunctions have been successfully fabricated by facingtargets direct-current sputtering at a substrate temperature of 600 °C without post-annealing and their current-voltage characteristics were measured at low temperatures ragne from 300 K down to 50 K. The ideality factor, saturation current and series resistance were estimated by the thermionic emission theory and Cheung’s method. By the thermionic emission theory, we calculated the ideality factor from the slope of the linear part from the forward lnJ-V and estimated the saturation current density from the straight line intercept of lnJ-V at a zero voltage. As decreasing temperatures from 300 down to 50 K, the value of ideality factor increased from 1.2 to 15.6, while the value of saturation current density decreased from 1.6 × 10-6 A/cm2 to 3.8 × 10-10 A/cm2. From the plots of dV/d(lnJ)-J and H(J)-J by Cheung’s method, the obtained values of series resistances are consistent with each other. The series resistances analyzed from both plots increased as decreasing temperatures.

    Original languageEnglish
    Title of host publicationEngineering and Innovative Materials III
    EditorsAxel Sikora, Axel Sikora, Muhammad Yahaya, Muhammad Yahaya, Sunny Su, Sunny Su
    PublisherTrans Tech Publications Ltd
    Pages57-61
    Number of pages5
    ISBN (Electronic)9783038352853, 9783038352853
    DOIs
    Publication statusPublished - Jan 1 2014
    Event3rd International Conference on Engineering and Innovative Materials, ICEIM 2014 - Kuala Lumpur, Malaysia
    Duration: Sep 4 2014Sep 5 2014

    Publication series

    NameAdvanced Materials Research
    Volume1043
    ISSN (Print)1022-6680
    ISSN (Electronic)1662-8985

    Other

    Other3rd International Conference on Engineering and Innovative Materials, ICEIM 2014
    CountryMalaysia
    CityKuala Lumpur
    Period9/4/149/5/14

    Fingerprint

    Heterojunctions
    Diodes
    Thermionic emission
    Thin films
    Substrates
    Current density
    Temperature
    Current voltage characteristics
    Sputtering
    Annealing
    Electric potential

    All Science Journal Classification (ASJC) codes

    • Engineering(all)

    Cite this

    Promros, N., Funasaki, S., Takahara, M., Shaban, M., & Yoshitake, T. (2014). Diode parameters of heterojunctions comprising p-type si substrate and n-type β-FeSi2 thin films. In A. Sikora, A. Sikora, M. Yahaya, M. Yahaya, S. Su, & S. Su (Eds.), Engineering and Innovative Materials III (pp. 57-61). (Advanced Materials Research; Vol. 1043). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/AMR.1043.57

    Diode parameters of heterojunctions comprising p-type si substrate and n-type β-FeSi2 thin films. / Promros, Nathaporn; Funasaki, Suguru; Takahara, Motoki; Shaban, Mahmoud; Yoshitake, Tsuyoshi.

    Engineering and Innovative Materials III. ed. / Axel Sikora; Axel Sikora; Muhammad Yahaya; Muhammad Yahaya; Sunny Su; Sunny Su. Trans Tech Publications Ltd, 2014. p. 57-61 (Advanced Materials Research; Vol. 1043).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Promros, N, Funasaki, S, Takahara, M, Shaban, M & Yoshitake, T 2014, Diode parameters of heterojunctions comprising p-type si substrate and n-type β-FeSi2 thin films. in A Sikora, A Sikora, M Yahaya, M Yahaya, S Su & S Su (eds), Engineering and Innovative Materials III. Advanced Materials Research, vol. 1043, Trans Tech Publications Ltd, pp. 57-61, 3rd International Conference on Engineering and Innovative Materials, ICEIM 2014, Kuala Lumpur, Malaysia, 9/4/14. https://doi.org/10.4028/www.scientific.net/AMR.1043.57
    Promros N, Funasaki S, Takahara M, Shaban M, Yoshitake T. Diode parameters of heterojunctions comprising p-type si substrate and n-type β-FeSi2 thin films. In Sikora A, Sikora A, Yahaya M, Yahaya M, Su S, Su S, editors, Engineering and Innovative Materials III. Trans Tech Publications Ltd. 2014. p. 57-61. (Advanced Materials Research). https://doi.org/10.4028/www.scientific.net/AMR.1043.57
    Promros, Nathaporn ; Funasaki, Suguru ; Takahara, Motoki ; Shaban, Mahmoud ; Yoshitake, Tsuyoshi. / Diode parameters of heterojunctions comprising p-type si substrate and n-type β-FeSi2 thin films. Engineering and Innovative Materials III. editor / Axel Sikora ; Axel Sikora ; Muhammad Yahaya ; Muhammad Yahaya ; Sunny Su ; Sunny Su. Trans Tech Publications Ltd, 2014. pp. 57-61 (Advanced Materials Research).
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