Abstract
In the current research, heterojunctions comprising p-type ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films and n-type Si substrates were formed via pulsed laser deposition. To extract their junction parameters via thermionic emission (TE) theory and Norde model, the measurement of dark current density-voltage curves was carried out under various temperatures ranging from 300 to 60 K. Through TE theory, the ideality factor values at 300 K and 60 K were 2.70 and 8.66, respectively. This justified that a heavy recombination process occurs at the junction interface in addition to another tunneling process at 300 K. The tunneling process is predominant at low temperatures. The barrier height values were 0.78 eV and 0.18 eV at 300 K and 60 K, respectively. The values for series resistance (Rs) calculated via Norde model at 300 K and 60 K were 275.24 Ω and 78.66 kΩ, respectively. The increment of Rs at low temperatures was likely due to the decrease of carrier concentration in the B-doped UNCD/a-C:H films when temperature was decreased.
| Original language | English |
|---|---|
| Pages (from-to) | 1567-1573 |
| Number of pages | 7 |
| Journal | Journal of Nanoscience and Nanotechnology |
| Volume | 19 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - Mar 1 2019 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Medicine(all)
Cite this
Diode Parameters of Heterojunctions Comprising p-Type Ultrananocrystalline Diamond Films and n-Type Si Substrates. / Chaleawpong, Rawiwan; Promros, Nathaporn; Charoenyuenyao, Peerasil; Hanada, Takanori; Ohmagari, Shinya; Zkria, Abdelrahman; Yoshitake, Tsuyoshi.
In: Journal of Nanoscience and Nanotechnology, Vol. 19, No. 3, 01.03.2019, p. 1567-1573.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Diode Parameters of Heterojunctions Comprising p-Type Ultrananocrystalline Diamond Films and n-Type Si Substrates
AU - Chaleawpong, Rawiwan
AU - Promros, Nathaporn
AU - Charoenyuenyao, Peerasil
AU - Hanada, Takanori
AU - Ohmagari, Shinya
AU - Zkria, Abdelrahman
AU - Yoshitake, Tsuyoshi
PY - 2019/3/1
Y1 - 2019/3/1
N2 - In the current research, heterojunctions comprising p-type ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films and n-type Si substrates were formed via pulsed laser deposition. To extract their junction parameters via thermionic emission (TE) theory and Norde model, the measurement of dark current density-voltage curves was carried out under various temperatures ranging from 300 to 60 K. Through TE theory, the ideality factor values at 300 K and 60 K were 2.70 and 8.66, respectively. This justified that a heavy recombination process occurs at the junction interface in addition to another tunneling process at 300 K. The tunneling process is predominant at low temperatures. The barrier height values were 0.78 eV and 0.18 eV at 300 K and 60 K, respectively. The values for series resistance (Rs) calculated via Norde model at 300 K and 60 K were 275.24 Ω and 78.66 kΩ, respectively. The increment of Rs at low temperatures was likely due to the decrease of carrier concentration in the B-doped UNCD/a-C:H films when temperature was decreased.
AB - In the current research, heterojunctions comprising p-type ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films and n-type Si substrates were formed via pulsed laser deposition. To extract their junction parameters via thermionic emission (TE) theory and Norde model, the measurement of dark current density-voltage curves was carried out under various temperatures ranging from 300 to 60 K. Through TE theory, the ideality factor values at 300 K and 60 K were 2.70 and 8.66, respectively. This justified that a heavy recombination process occurs at the junction interface in addition to another tunneling process at 300 K. The tunneling process is predominant at low temperatures. The barrier height values were 0.78 eV and 0.18 eV at 300 K and 60 K, respectively. The values for series resistance (Rs) calculated via Norde model at 300 K and 60 K were 275.24 Ω and 78.66 kΩ, respectively. The increment of Rs at low temperatures was likely due to the decrease of carrier concentration in the B-doped UNCD/a-C:H films when temperature was decreased.
UR - http://www.scopus.com/inward/record.url?scp=85057094255&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85057094255&partnerID=8YFLogxK
U2 - 10.1166/jnn.2019.16232
DO - 10.1166/jnn.2019.16232
M3 - Article
C2 - 30469224
VL - 19
SP - 1567
EP - 1573
JO - Journal of Nanoscience and Nanotechnology
JF - Journal of Nanoscience and Nanotechnology
SN - 1533-4880
IS - 3
ER -