Direct band gap electroluminescence from bulk germanium at room temperature using an asymmetric metal/germanium/metal structure

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

As a promising material for fabricating on-chip optoelectronic devices, germanium (Ge) has a direct band gap of 0.8 eV, which matches with the wavelength for optical communication. The energy difference is only 134 meV between direct and indirect band gaps, implying the possibility of a direct band gap light emission. In general, a p-i-n diode structure is used for a Ge photo emitter, of which fabrication process is relatively complicated and high-quality n-type doping is still an issue. Recently we achieved high Schottky barrier heights for electrons ΦBN = 0.60 eV (HfGe/n-Ge) and holes ΦBP = 0.57 eV (TiN/p-Ge) [1,2]. Based on this technology, we demonstrate direct band gap room temperature electroluminescence (EL) from bulk Ge using a fin-type asymmetric metel/Ge/metal (HfGe/Ge/TiN) structure.

Original languageEnglish
Title of host publication2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014
PublisherIEEE Computer Society
Pages109-110
Number of pages2
ISBN (Print)9781479954285
DOIs
Publication statusPublished - Jan 1 2014
Event7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014 - Singapore, Singapore
Duration: Jun 2 2014Jun 4 2014

Publication series

Name2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014

Other

Other7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014
CountrySingapore
CitySingapore
Period6/2/146/4/14

Fingerprint

Electroluminescence
Germanium
Energy gap
Metals
Temperature
Light emission
Optical communication
Optoelectronic devices
Diodes
Doping (additives)
Fabrication
Wavelength
Electrons

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Wang, D., Kamezawa, S., Yamamoto, K., & Nakashima, H. (2014). Direct band gap electroluminescence from bulk germanium at room temperature using an asymmetric metal/germanium/metal structure. In 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014 (pp. 109-110). [6874642] (2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014). IEEE Computer Society. https://doi.org/10.1109/ISTDM.2014.6874642

Direct band gap electroluminescence from bulk germanium at room temperature using an asymmetric metal/germanium/metal structure. / Wang, Dong; Kamezawa, Sho; Yamamoto, Keisuke; Nakashima, Hiroshi.

2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014. IEEE Computer Society, 2014. p. 109-110 6874642 (2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Wang, D, Kamezawa, S, Yamamoto, K & Nakashima, H 2014, Direct band gap electroluminescence from bulk germanium at room temperature using an asymmetric metal/germanium/metal structure. in 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014., 6874642, 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014, IEEE Computer Society, pp. 109-110, 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014, Singapore, Singapore, 6/2/14. https://doi.org/10.1109/ISTDM.2014.6874642
Wang D, Kamezawa S, Yamamoto K, Nakashima H. Direct band gap electroluminescence from bulk germanium at room temperature using an asymmetric metal/germanium/metal structure. In 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014. IEEE Computer Society. 2014. p. 109-110. 6874642. (2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014). https://doi.org/10.1109/ISTDM.2014.6874642
Wang, Dong ; Kamezawa, Sho ; Yamamoto, Keisuke ; Nakashima, Hiroshi. / Direct band gap electroluminescence from bulk germanium at room temperature using an asymmetric metal/germanium/metal structure. 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014. IEEE Computer Society, 2014. pp. 109-110 (2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014).
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