Direct band gap light emission and detection at room temperature in bulk germanium diodes with HfGe/Ge/TiN structure

Dong Wang; Takayuki Maekura; Keisuke Yamamoto; Hiroshi Nakashima

doi:10.1016/j.tsf.2015.09.074

Direct band gap light emission and detection at room temperature in bulk germanium diodes with HfGe/Ge/TiN structure

Dong Wang, Takayuki Maekura, Keisuke Yamamoto, Hiroshi Nakashima

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Direct band gap (DBG) electroluminescence (EL) and photo detection were studied at room temperature for n-type bulk germanium (Ge) diodes with a fin type lateral HfGe/Ge/TiN structure. DBG EL spectra peaked at 1.55 μm were clearly observed due to small hole and electron barrier heights of HfGe/Ge and TiN/Ge contacts. DBG EL peak intensity increased with increasing doping level of Ge substrate due to increased electron population in direct conduction band. The integrated intensity of DBG EL spectrum is proportional to the area of active region, implying a good surface-uniformity of EL efficiency. Small dark current intensity was measured as 2.4 × 10^-7 A under a reverse bias voltage of - 1 V, corresponding to dark current densities of 5.3 × 10^-10 A/μm or 3.2 × 10^-10 A/μm². At the wavelength of 1.55 μm, a linear dependence of photo current intensity on laser power was observed with a responsivity of 0.44 A/W at a reverse bias voltage of - 1 V.

Original language	English
Pages (from-to)	43-47
Number of pages	5
Journal	Thin Solid Films
Volume	602
DOIs	https://doi.org/10.1016/j.tsf.2015.09.074
Publication status	Published - Mar 1 2016

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2015.09.074

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@article{914001afb621484db7f90b9459d03a85,

title = "Direct band gap light emission and detection at room temperature in bulk germanium diodes with HfGe/Ge/TiN structure",

abstract = "Direct band gap (DBG) electroluminescence (EL) and photo detection were studied at room temperature for n-type bulk germanium (Ge) diodes with a fin type lateral HfGe/Ge/TiN structure. DBG EL spectra peaked at 1.55 μm were clearly observed due to small hole and electron barrier heights of HfGe/Ge and TiN/Ge contacts. DBG EL peak intensity increased with increasing doping level of Ge substrate due to increased electron population in direct conduction band. The integrated intensity of DBG EL spectrum is proportional to the area of active region, implying a good surface-uniformity of EL efficiency. Small dark current intensity was measured as 2.4 × 10-7 A under a reverse bias voltage of - 1 V, corresponding to dark current densities of 5.3 × 10-10 A/μm or 3.2 × 10-10 A/μm2. At the wavelength of 1.55 μm, a linear dependence of photo current intensity on laser power was observed with a responsivity of 0.44 A/W at a reverse bias voltage of - 1 V.",

author = "Dong Wang and Takayuki Maekura and Keisuke Yamamoto and Hiroshi Nakashima",

note = "Funding Information: This work was supported by ( JSPS ) KAKENHI (Grant No. 26289090 ).",

year = "2016",

month = mar,

day = "1",

doi = "10.1016/j.tsf.2015.09.074",

language = "English",

volume = "602",

pages = "43--47",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

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TY - JOUR

T1 - Direct band gap light emission and detection at room temperature in bulk germanium diodes with HfGe/Ge/TiN structure

AU - Wang, Dong

AU - Maekura, Takayuki

AU - Yamamoto, Keisuke

AU - Nakashima, Hiroshi

N1 - Funding Information: This work was supported by ( JSPS ) KAKENHI (Grant No. 26289090 ).

PY - 2016/3/1

Y1 - 2016/3/1

N2 - Direct band gap (DBG) electroluminescence (EL) and photo detection were studied at room temperature for n-type bulk germanium (Ge) diodes with a fin type lateral HfGe/Ge/TiN structure. DBG EL spectra peaked at 1.55 μm were clearly observed due to small hole and electron barrier heights of HfGe/Ge and TiN/Ge contacts. DBG EL peak intensity increased with increasing doping level of Ge substrate due to increased electron population in direct conduction band. The integrated intensity of DBG EL spectrum is proportional to the area of active region, implying a good surface-uniformity of EL efficiency. Small dark current intensity was measured as 2.4 × 10-7 A under a reverse bias voltage of - 1 V, corresponding to dark current densities of 5.3 × 10-10 A/μm or 3.2 × 10-10 A/μm2. At the wavelength of 1.55 μm, a linear dependence of photo current intensity on laser power was observed with a responsivity of 0.44 A/W at a reverse bias voltage of - 1 V.

AB - Direct band gap (DBG) electroluminescence (EL) and photo detection were studied at room temperature for n-type bulk germanium (Ge) diodes with a fin type lateral HfGe/Ge/TiN structure. DBG EL spectra peaked at 1.55 μm were clearly observed due to small hole and electron barrier heights of HfGe/Ge and TiN/Ge contacts. DBG EL peak intensity increased with increasing doping level of Ge substrate due to increased electron population in direct conduction band. The integrated intensity of DBG EL spectrum is proportional to the area of active region, implying a good surface-uniformity of EL efficiency. Small dark current intensity was measured as 2.4 × 10-7 A under a reverse bias voltage of - 1 V, corresponding to dark current densities of 5.3 × 10-10 A/μm or 3.2 × 10-10 A/μm2. At the wavelength of 1.55 μm, a linear dependence of photo current intensity on laser power was observed with a responsivity of 0.44 A/W at a reverse bias voltage of - 1 V.

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U2 - 10.1016/j.tsf.2015.09.074

DO - 10.1016/j.tsf.2015.09.074

M3 - Article

AN - SCOPUS:84951757427

SN - 0040-6090

VL - 602

SP - 43

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JO - Thin Solid Films

JF - Thin Solid Films

ER -

Direct band gap light emission and detection at room temperature in bulk germanium diodes with HfGe/Ge/TiN structure

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