Direct bonding of LiNbO3 and SiC wafers at room temperature

Ryo Takigawa, Jun Utsumi

Research output: Contribution to journalArticle

Abstract

Application of the surface activated bonding (SAB) method to direct bonding of LiNbO3 and SiC was investigated. SAB using argon fast atom beam bombardment resulted in the successful formation of a room-temperature bonded LiNbO3/SiC wafer for the first time. Cross-sectional transmission electron microscopy (TEM) observations showed a void-free bonded interface at the atomic level. The bonded interface had an amorphous-like layer that was a few nanometers thick, which was considered to be formed during the bombardment process. The resulting LiNbO3/SiC structure can be utilized to realize a new configuration of various devices including surface acoustic wave filters for use in high-power applications that can satisfy both temperature compensation and heat dissipation requirements.

Original languageEnglish
Pages (from-to)58-61
Number of pages4
JournalScripta Materialia
Volume174
DOIs
Publication statusPublished - Jan 1 2020

Fingerprint

Niobium compounds
niobium compounds
Lithium Compounds
Silicon Compounds
Metal cladding
Lithium compounds
lithium compounds
Silicon compounds
Acoustic surface wave filters
silicon compounds
High resolution transmission electron microscopy
Silicon carbide
silicon carbides
Acoustic waves
wafers
bombardment
room temperature
surface acoustic wave devices
temperature compensation
Argon

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys

Cite this

Direct bonding of LiNbO3 and SiC wafers at room temperature. / Takigawa, Ryo; Utsumi, Jun.

In: Scripta Materialia, Vol. 174, 01.01.2020, p. 58-61.

Research output: Contribution to journalArticle

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