Direct-coupled distributed baseband amplifier IC's for 40-Gb/s optical communication

Shunji Kimura, Yuhki Imai, Yutaka Miyamoto

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

We have developed GaAs MESFET baseband amplifiers using novel distributed amplification schemes. The key feature of their design is a direct coupling architecture employing two kinds of new distributed dc transformers. One is a distributed level-shift circuit and the other is a distributed source coupled FET logic (SCFL) level transformer. A two-stage distributed amplifier IC cascaded with the distributed level-shift circuit has a gain of 17 dB with a 0-to-30-GHz bandwidth. This is the best performance so far among all reported GaAs MESFET baseband amplifier IC's. A distributed baseband amplifier IC with the distributed SCFL level transformer connected by another distributed level-shift circuit also has a 0-to-30-GHz bandwidth with a gain of 7 dB. This is the first IC with an SCFL interface to have such broad-band characteristics.

Original languageEnglish
Pages (from-to)1374-1379
Number of pages6
JournalIEEE Journal of Solid-State Circuits
Volume31
Issue number10
DOIs
Publication statusPublished - Oct 1 1996
Externally publishedYes

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Optical communication
Field effect transistors
Networks (circuits)
Bandwidth
Light amplifiers
Amplification

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Direct-coupled distributed baseband amplifier IC's for 40-Gb/s optical communication. / Kimura, Shunji; Imai, Yuhki; Miyamoto, Yutaka.

In: IEEE Journal of Solid-State Circuits, Vol. 31, No. 10, 01.10.1996, p. 1374-1379.

Research output: Contribution to journalArticle

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