Direct-coupled distributed baseband amplifier IC's for 40-Gb/s optical communication

Shunji Kimura; Yuhki Imai; Yutaka Miyamoto

doi:10.1109/4.540043

Direct-coupled distributed baseband amplifier IC's for 40-Gb/s optical communication

Shunji Kimura, Yuhki Imai, Yutaka Miyamoto

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

We have developed GaAs MESFET baseband amplifiers using novel distributed amplification schemes. The key feature of their design is a direct coupling architecture employing two kinds of new distributed dc transformers. One is a distributed level-shift circuit and the other is a distributed source coupled FET logic (SCFL) level transformer. A two-stage distributed amplifier IC cascaded with the distributed level-shift circuit has a gain of 17 dB with a 0-to-30-GHz bandwidth. This is the best performance so far among all reported GaAs MESFET baseband amplifier IC's. A distributed baseband amplifier IC with the distributed SCFL level transformer connected by another distributed level-shift circuit also has a 0-to-30-GHz bandwidth with a gain of 7 dB. This is the first IC with an SCFL interface to have such broad-band characteristics.

Original language	English
Pages (from-to)	1374-1379
Number of pages	6
Journal	IEEE Journal of Solid-State Circuits
Volume	31
Issue number	10
DOIs	https://doi.org/10.1109/4.540043
Publication status	Published - Oct 1 1996
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1109/4.540043

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abstract = "We have developed GaAs MESFET baseband amplifiers using novel distributed amplification schemes. The key feature of their design is a direct coupling architecture employing two kinds of new distributed dc transformers. One is a distributed level-shift circuit and the other is a distributed source coupled FET logic (SCFL) level transformer. A two-stage distributed amplifier IC cascaded with the distributed level-shift circuit has a gain of 17 dB with a 0-to-30-GHz bandwidth. This is the best performance so far among all reported GaAs MESFET baseband amplifier IC's. A distributed baseband amplifier IC with the distributed SCFL level transformer connected by another distributed level-shift circuit also has a 0-to-30-GHz bandwidth with a gain of 7 dB. This is the first IC with an SCFL interface to have such broad-band characteristics.",

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Direct-coupled distributed baseband amplifier IC's for 40-Gb/s optical communication

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