Direct crystallization and characterization of Bi3TiTaO 9 thin films prepared by metalorganic chemical vapor deposition

Muneyasu Suzuki, Hajime Nagata, Norimasa Nukaga, Takayuki Watanabe, Hiroshi Funakubo, Tadashi Takenaka

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Abstract

Bi3TiTaO9 (BTT) thin films were prepared on (111)Pt/Ti/SiO2/Si substrate by electron cyclotron resonance plasma-enhanced metalorganic chemical vapor deposition (ECR-MOCVD). BTT thin films deposited at 550°C were found to consist of a single phase of bismuth layer structure by X-ray diffraction (XRD). This temperature was lower than that reported in the data for obtaining single phase SrBi2Ta 2O9 (SBT) thin films prepared by MOCVD. Furthermore, the reciprocal space mapping of BTT thin films showed the (103)-preferred orientation of this film, as well as the orientation of SBT thin films. The dielectric constant, er, and loss tangent, tan δ, of the BTT thin film were 180 and 3% at 1 MHz, respectively. An abrupt increase of the leakage current of this film was observed at about 280kV/cm.

Original languageEnglish
Pages (from-to)6825-6828
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume41
Issue number11 B
DOIs
Publication statusPublished - Nov 1 2002
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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