Direct energy conversion from gamma ray to electricity using silicon semiconductor cells

Kenichi Hashizume, H. Kimura, T. Otsuka, T. Tanabe, T. Okai

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    Gamma cells using p-type Si substrates with various resistivities were fabricated with a vacuum evaporation method. The energy conversion efficiency from gamma ray to electric power successfully reached about 2% for the gamma cell with a resistivity of 50∼100 Ω·cm.

    Original languageEnglish
    Title of host publicationBasic Actinide Science and Materials for Nuclear Applications
    Pages223-228
    Number of pages6
    Publication statusPublished - Dec 24 2010
    Event2010 MRS Spring Meeting - San Francisco, CA, United States
    Duration: Apr 5 2010Apr 9 2010

    Publication series

    NameMaterials Research Society Symposium Proceedings
    Volume1264
    ISSN (Print)0272-9172

    Other

    Other2010 MRS Spring Meeting
    CountryUnited States
    CitySan Francisco, CA
    Period4/5/104/9/10

    Fingerprint

    Direct energy conversion
    Vacuum evaporation
    energy conversion
    Silicon
    electricity
    Energy conversion
    Gamma rays
    Conversion efficiency
    Electricity
    gamma rays
    Semiconductor materials
    electrical resistivity
    energy conversion efficiency
    silicon
    Substrates
    electric power
    cells
    evaporation
    vacuum

    All Science Journal Classification (ASJC) codes

    • Materials Science(all)
    • Condensed Matter Physics
    • Mechanics of Materials
    • Mechanical Engineering

    Cite this

    Hashizume, K., Kimura, H., Otsuka, T., Tanabe, T., & Okai, T. (2010). Direct energy conversion from gamma ray to electricity using silicon semiconductor cells. In Basic Actinide Science and Materials for Nuclear Applications (pp. 223-228). (Materials Research Society Symposium Proceedings; Vol. 1264).

    Direct energy conversion from gamma ray to electricity using silicon semiconductor cells. / Hashizume, Kenichi; Kimura, H.; Otsuka, T.; Tanabe, T.; Okai, T.

    Basic Actinide Science and Materials for Nuclear Applications. 2010. p. 223-228 (Materials Research Society Symposium Proceedings; Vol. 1264).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Hashizume, K, Kimura, H, Otsuka, T, Tanabe, T & Okai, T 2010, Direct energy conversion from gamma ray to electricity using silicon semiconductor cells. in Basic Actinide Science and Materials for Nuclear Applications. Materials Research Society Symposium Proceedings, vol. 1264, pp. 223-228, 2010 MRS Spring Meeting, San Francisco, CA, United States, 4/5/10.
    Hashizume K, Kimura H, Otsuka T, Tanabe T, Okai T. Direct energy conversion from gamma ray to electricity using silicon semiconductor cells. In Basic Actinide Science and Materials for Nuclear Applications. 2010. p. 223-228. (Materials Research Society Symposium Proceedings).
    Hashizume, Kenichi ; Kimura, H. ; Otsuka, T. ; Tanabe, T. ; Okai, T. / Direct energy conversion from gamma ray to electricity using silicon semiconductor cells. Basic Actinide Science and Materials for Nuclear Applications. 2010. pp. 223-228 (Materials Research Society Symposium Proceedings).
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