Direct growth of bent carbon nanotubes on surface engineered sapphire

Hiroki Ago, Kenta Imamoto, Tetsushi Nishi, Tsuji Masaharu Tsuji, Tatsuya Ikuta, Koji Takahashi, Munetoshi Fukui

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Bending of horizontally aligned single-walled carbon nanotubes (SWNTs) was achieved on surface engineered single-crystal sapphire (α-Al 2O3). The SWNTs grown on the r-plane sapphire are aligned along the specific crystallographic [11̄01̄] direction due to the lattice-oriented growth, and we created artificial step structures perpendicular to this SWNT growth direction. These steps changed the nanotube growth direction from the [11̄01̄] to the step direction with the bending angle of nearly 90°. Effects of the bending structure on electron transport property were studied. Our approach to combine the lattice-oriented growth with the step-templated growth will offer a new route toward the growth of two-dimensionally controlled SWNT architectures for future nanoelectronics.

Original languageEnglish
Pages (from-to)13121-13124
Number of pages4
JournalJournal of Physical Chemistry C
Volume113
Issue number30
DOIs
Publication statusPublished - Jul 30 2009

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Energy(all)
  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films

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