Direct growth of patterned graphene on SiC(0001) surfaces by KrF excimer-laser irradiation

Masakazu Hattori, Kazuaki Furukawa, Makoto Takamura, Hiroki Hibino, Hiroshi Ikenoue

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

A novel method of direct growth of patterned graphene on SiC(0001) surfaces using KrF excimer-laser irradiation is proposed. It relies on the local sublimation of Si atoms within the irradiated area to induce graphene growth through a rearrangement of surplus carbon. Alaser with a wavelength of 248 nm was pulsed with a duration of 55 ns and a repetition rate of 100 Hz that was used to graphene forming. Following laser irradiation of 1.2 J/cm2 (5000 shots) under an Ar atmosphere (500 Pa), characteristic graphene peaks were observed in the Raman spectra of the irradiated area, thereby confirming the formation of graphene. The ratio between the graphene bands in the Raman spectra was used to estimate the grain size at 61.3 nm. Through high-resolution transmission electron microscopy, it was confirmed that two layers of graphene were indeed formed in the laser irradiated region. Using this knowledge, we also demonstrate that line-And-space (L&S) graphene patterns with a pitch of 8 μm can be directly formed using our method.

Original languageEnglish
Title of host publicationLaser-Based Micro- and Nanoprocessing IX
EditorsUdo Klotzbach, Kunihiko Washio, Craig B. Arnold
PublisherSPIE
ISBN (Electronic)9781628414417
DOIs
Publication statusPublished - Jan 1 2015
EventLaser-Based Micro- and Nanoprocessing IX - San Francisco, United States
Duration: Feb 10 2015Feb 12 2015

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume9351
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Other

OtherLaser-Based Micro- and Nanoprocessing IX
CountryUnited States
CitySan Francisco
Period2/10/152/12/15

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • Cite this

    Hattori, M., Furukawa, K., Takamura, M., Hibino, H., & Ikenoue, H. (2015). Direct growth of patterned graphene on SiC(0001) surfaces by KrF excimer-laser irradiation. In U. Klotzbach, K. Washio, & C. B. Arnold (Eds.), Laser-Based Micro- and Nanoprocessing IX [93511A] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9351). SPIE. https://doi.org/10.1117/12.2078652