Direct imaging of electron recombination and transport on a semiconductor surface by femtosecond time-resolved photoemission electron microscopy

Keiki Fukumoto, Yuki Yamada, Ken Onda, Shin Ya Koshihara

Research output: Contribution to journalArticlepeer-review

34 Citations (Scopus)

Abstract

Much effort has been devoted to the development of techniques to probe carrier dynamics, which govern many semiconductor device characteristics. We report direct imaging of electron dynamics on semiconductor surfaces by time-resolved photoemission electron microscopy using femtosecond laser pulses. The experiments utilized a variable-repetition-rate femtosecond laser system to suppress sample charging problems. The recombination of photogenerated electrons and the lateral motion of the electrons driven by an external electric field on a GaAs surface were visualized. The mobility was estimated from a linear relationship between the drift velocity and the potential gradient.

Original languageEnglish
Article number053117
JournalApplied Physics Letters
Volume104
Issue number5
DOIs
Publication statusPublished - Feb 3 2014
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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