Direct laser writing of complementary logic gates and lateral p-n diodes in a solution-processible monolithic organic semiconductor

Jean Charles Ribierre, Takashi Fujihara, Satoshi Watanabe, Mutsuyoshi Matsumoto, Tsuyoshi Muto, Aiko Nakao, Tetsuya Aoyama

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Abstract

(Figure Presented) Complementary organic logic circuits and lateral bipolar microstructures with specified pand n-region profiles can be patterned by direct laser writing in solution- processed thin films faricated from a quinoidal oligothiophene derivative. To demonstrate the versatility of this method, the fabrication of NAND and NOR logic gates as well as a gate-modulated lateral p-n diode is reported (see figure).

Original languageEnglish
Pages (from-to)1722-1726
Number of pages5
JournalAdvanced Materials
Volume22
Issue number15
DOIs
Publication statusPublished - Apr 18 2010

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Ribierre, J. C., Fujihara, T., Watanabe, S., Matsumoto, M., Muto, T., Nakao, A., & Aoyama, T. (2010). Direct laser writing of complementary logic gates and lateral p-n diodes in a solution-processible monolithic organic semiconductor. Advanced Materials, 22(15), 1722-1726. https://doi.org/10.1002/adma.200903152