Direct observation and numerical simulation of molten silicon flow during crystal growth under magnetic fields by X-ray radiography and large-scale computation

M. Watanabe, K. W. Yi, T. Hibiya, K. Kakimoto

Research output: Contribution to journalArticle

23 Citations (Scopus)


Control of melt flow during Czochralski (CZ) crystal growth by application of magnetic fields is an important technique for large-diameter (>300 mm) silicon single crystals. Melt convection under magnetic fields is an interesting problem for electromagnetic-hydrodynamics. This paper reviews the effects of a vertical magnetic field and a cusp-shaped magnetic field on melt flow during CZ crystal growth. Melt flow in vertical magnetic fields or cusp-shaped magnetic fields was investigated by the direct observation method based on X-ray radiography and by numerical simulation. The first part of this review shows the result of direct observation of molten silicon flow under magnetic fields. It also compares the results of experimental and numerical simulation. The second part shows the details of the numerical simulation of the behavior of molten silicon in magnetic fields.

Original languageEnglish
Pages (from-to)215-238
Number of pages24
JournalProgress in Crystal Growth and Characterization of Materials
Issue number1
Publication statusPublished - Jan 1 1999


All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

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