Direct observation by X-ray radiography of convection of boric oxide in the GaAs liquid encapsulated czochralski growth

Koichi Kakimoto, Minoru Eguchi, Hisao Watanabe, Taketoshi Hibiya

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

Convection of molten boric oxide (B2O3) encapsulant during liquid encapsulated Czochralski single crystal growth of GaAs was directly observed by X-ray radiography. The melt flow pattern was monitored using a solid tracer method. The observed flow pattern was axisymmetric, and the flow was steady. The flow of the molten B2O3 was more stable than that of molten silicon. The flow velocity of the molten boric oxide with and without single crystal were about 0.03 and 0.3 mm/s, respectively. Numerical simulation of the molten B2O3 natural convection using commercially available code "FLUENT" was also performed. Three-dimensional calculation was carried out employing observed non-axisymmetric temperature distribution in a crucible holder. The calculated data was able to explain the steady and axisymmetric flow observed even in the non-axisymmetric temperature distribution.

Original languageEnglish
Pages (from-to)405-411
Number of pages7
JournalJournal of Crystal Growth
Volume94
Issue number2
DOIs
Publication statusPublished - Feb 1 1989
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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