TY - JOUR
T1 - Direct observation of vacancy in silicon using sub-Kelvin ultrasonic measurements
AU - Goto, Terutaka
AU - Yamada-Kaneta, Hiroshi
AU - Saito, Yasuhiro
AU - Nemoto, Yuichi
AU - Sato, Koji
AU - Kakimoto, Koichi
AU - Nakamura, Shintaro
N1 - Funding Information:
The present work was supported by Grant-in-Aid for the Creation of Innovations through Business-Academic-Public Sector Cooperation (No. 15404) of the Ministry of Education, Culture, Sports, Science and Technology of Japan. The authors thank Drs. M. Hourai, M. Sano and T. Ono of SUMCO Corporation for stimulating discussions. We appreciate Profs. K. Izumi and M. Nakao of Osaka Prefecture University for the annealing of FZ silicon crystal. The fabrication of the piezoelectric ZnO film was supported by Dr. Y. Furumura and Mrs. E. Haikata in Philtech Inc.
PY - 2006/10/15
Y1 - 2006/10/15
N2 - We carried out sub-Kelvin ultrasonic measurements for observation of vacancies in crystalline silicon. The longitudinal elastic constants of non-doped and B-doped floating zone (FZ) silicon crystals in commercial base revealed low-temperature elastic softening below 20 K. The applied magnetic fields turns the softening of the B-doped FZ silicon to a temperature-independent behavior, while the fields up to 16 T at base temperature 20 mK make no effect on the softening of the non-doped FZ silicon. This result means that the vacancy accompanying the non-magnetic charge state V0 in the non-doped silicon and the magnetic V+ in the B-doped silicon is responsible for the low-temperature softening through the Jahn-Teller effect. The direct observation of the vacancy using the sub-Kelvin ultrasonic measurements advances point defects controlling in silicon wafers and semiconductor devices.
AB - We carried out sub-Kelvin ultrasonic measurements for observation of vacancies in crystalline silicon. The longitudinal elastic constants of non-doped and B-doped floating zone (FZ) silicon crystals in commercial base revealed low-temperature elastic softening below 20 K. The applied magnetic fields turns the softening of the B-doped FZ silicon to a temperature-independent behavior, while the fields up to 16 T at base temperature 20 mK make no effect on the softening of the non-doped FZ silicon. This result means that the vacancy accompanying the non-magnetic charge state V0 in the non-doped silicon and the magnetic V+ in the B-doped silicon is responsible for the low-temperature softening through the Jahn-Teller effect. The direct observation of the vacancy using the sub-Kelvin ultrasonic measurements advances point defects controlling in silicon wafers and semiconductor devices.
UR - http://www.scopus.com/inward/record.url?scp=33750288945&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33750288945&partnerID=8YFLogxK
U2 - 10.1016/j.mseb.2006.07.038
DO - 10.1016/j.mseb.2006.07.038
M3 - Article
AN - SCOPUS:33750288945
SN - 0921-5107
VL - 134
SP - 233
EP - 239
JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
IS - 2-3 SPEC. ISS.
ER -