TY - GEN
T1 - Direct photo emission motion observation of current filaments in the IGBT under avalanche breakdown condition
AU - Endo, Koichi
AU - Nagamine, Shinji
AU - Saito, Wataru
AU - Matsudai, Tomoko
AU - Ogura, Tsuneo
AU - Setoya, Takashi
AU - Nakamae, Koji
PY - 2016/7/25
Y1 - 2016/7/25
N2 - Many recent studies have been reported that the current distribution has non-uniformity in IGBT under Unclamped inductive switching (UIS) condition. Those discussions are based on the calculation result performed using device simulators. And, the observation of thermal action of device has been reported by using the IR thermography. The non-uniform temperature distribution on chip and thermal map change at every several micro second periods. In this study, time resolved emission (TRE) microscopy was used to get highly precise data. The probability distribution of current in the IGBT under UIS condition was observed. Also, a change of current distribution dependent on the time and motion of current concentration were detected. These areas of high current density existence probability move along termination region of device 1.75μs after avalanche breakdown with damping. This is the first study to show the direct motion observation of photon emission from the current fllamentation in IGBT under avalanche breakdown condition.
AB - Many recent studies have been reported that the current distribution has non-uniformity in IGBT under Unclamped inductive switching (UIS) condition. Those discussions are based on the calculation result performed using device simulators. And, the observation of thermal action of device has been reported by using the IR thermography. The non-uniform temperature distribution on chip and thermal map change at every several micro second periods. In this study, time resolved emission (TRE) microscopy was used to get highly precise data. The probability distribution of current in the IGBT under UIS condition was observed. Also, a change of current distribution dependent on the time and motion of current concentration were detected. These areas of high current density existence probability move along termination region of device 1.75μs after avalanche breakdown with damping. This is the first study to show the direct motion observation of photon emission from the current fllamentation in IGBT under avalanche breakdown condition.
UR - http://www.scopus.com/inward/record.url?scp=84982179401&partnerID=8YFLogxK
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U2 - 10.1109/ISPSD.2016.7520854
DO - 10.1109/ISPSD.2016.7520854
M3 - Conference contribution
AN - SCOPUS:84982179401
T3 - Proceedings of the International Symposium on Power Semiconductor Devices and ICs
SP - 367
EP - 370
BT - Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016
Y2 - 12 June 2016 through 16 June 2016
ER -