Abstract
We clarified the relationship between the lattice-oriented AAP growth and step-templated growth modes on A-face sapphire. The atomic arrangement was found to be dominant for the single-atomic steps, while the SWNTs align along the steps edges when the step becomes higher than double-atomic steps. Our finding opens up a possibility of creating hierarchical network of SWNTs on surface-engineered sapphire substrates by combining these two growth modes.
Original language | English |
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Title of host publication | Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC |
Pages | 456-457 |
Number of pages | 2 |
DOIs | |
Publication status | Published - 2007 |
Event | s20th International Microprocesses and Nanotechnology Conference, MNC 2007 - Kyoto, Japan Duration: Nov 5 2007 → Nov 8 2007 |
Other
Other | s20th International Microprocesses and Nanotechnology Conference, MNC 2007 |
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Country/Territory | Japan |
City | Kyoto |
Period | 11/5/07 → 11/8/07 |
All Science Journal Classification (ASJC) codes
- Hardware and Architecture
- Electrical and Electronic Engineering