Directional growth of Si nanowires on insulating films by electric-field-assisted metal-induced lateral crystallization

Hiroshi Kanno, Atsushi Kenjo, Taizoh Sadoh, Masanobu Miyao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Metal-induced lateral crystallization of amorphous Si has been investigated under a wide range of electric fields (0-4000 V/cm). In the low field region (<100 V/cm), lateral growth velocity at the cathode side was enhanced by applying an electric field. This achieved formation of poly-Si with a large area (∼50 μm) during low-temperature annealing (525°C, 25 h). When the electric field exceeded 100 V/cm, the lateral growth velocity decreased with increasing the electric field strength. Under the extremely high electric field (>2000 V/cm), directional growth aligned to the electric field was observed. This new findings will be a powerful tool to achieve new poly-Si with highly controlled structures.

Original languageEnglish
Title of host publicationProgress in Semiconductor Materials V - Novel Materials and Electronic and Optoelectronic Applications
Pages257-262
Number of pages6
Publication statusPublished - Aug 23 2006
Event2005 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 28 2005Dec 2 2005

Publication series

NameMaterials Research Society Symposium Proceedings
Volume891
ISSN (Print)0272-9172

Other

Other2005 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period11/28/0512/2/05

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Kanno, H., Kenjo, A., Sadoh, T., & Miyao, M. (2006). Directional growth of Si nanowires on insulating films by electric-field-assisted metal-induced lateral crystallization. In Progress in Semiconductor Materials V - Novel Materials and Electronic and Optoelectronic Applications (pp. 257-262). (Materials Research Society Symposium Proceedings; Vol. 891).