Directional growth of Si nanowires on insulating films by electric-field-assisted metal-induced lateral crystallization

Hiroshi Kanno, Atsushi Kenjo, Taizoh Sadoh, Masanobu Miyao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Metal-induced lateral crystallization of amorphous Si has been investigated under a wide range of electric fields (0-4000 V/cm). In the low field region (<100 V/cm), lateral growth velocity at the cathode side was enhanced by applying an electric field. This achieved formation of poly-Si with a large area (∼50 μm) during low-temperature annealing (525°C, 25 h). When the electric field exceeded 100 V/cm, the lateral growth velocity decreased with increasing the electric field strength. Under the extremely high electric field (>2000 V/cm), directional growth aligned to the electric field was observed. This new findings will be a powerful tool to achieve new poly-Si with highly controlled structures.

Original languageEnglish
Title of host publicationProgress in Semiconductor Materials V - Novel Materials and Electronic and Optoelectronic Applications
Pages257-262
Number of pages6
Publication statusPublished - Aug 23 2006
Event2005 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 28 2005Dec 2 2005

Publication series

NameMaterials Research Society Symposium Proceedings
Volume891
ISSN (Print)0272-9172

Other

Other2005 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period11/28/0512/2/05

Fingerprint

Crystallization
Nanowires
Metals
Electric fields
Polysilicon

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Kanno, H., Kenjo, A., Sadoh, T., & Miyao, M. (2006). Directional growth of Si nanowires on insulating films by electric-field-assisted metal-induced lateral crystallization. In Progress in Semiconductor Materials V - Novel Materials and Electronic and Optoelectronic Applications (pp. 257-262). (Materials Research Society Symposium Proceedings; Vol. 891).

Directional growth of Si nanowires on insulating films by electric-field-assisted metal-induced lateral crystallization. / Kanno, Hiroshi; Kenjo, Atsushi; Sadoh, Taizoh; Miyao, Masanobu.

Progress in Semiconductor Materials V - Novel Materials and Electronic and Optoelectronic Applications. 2006. p. 257-262 (Materials Research Society Symposium Proceedings; Vol. 891).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kanno, H, Kenjo, A, Sadoh, T & Miyao, M 2006, Directional growth of Si nanowires on insulating films by electric-field-assisted metal-induced lateral crystallization. in Progress in Semiconductor Materials V - Novel Materials and Electronic and Optoelectronic Applications. Materials Research Society Symposium Proceedings, vol. 891, pp. 257-262, 2005 MRS Fall Meeting, Boston, MA, United States, 11/28/05.
Kanno H, Kenjo A, Sadoh T, Miyao M. Directional growth of Si nanowires on insulating films by electric-field-assisted metal-induced lateral crystallization. In Progress in Semiconductor Materials V - Novel Materials and Electronic and Optoelectronic Applications. 2006. p. 257-262. (Materials Research Society Symposium Proceedings).
Kanno, Hiroshi ; Kenjo, Atsushi ; Sadoh, Taizoh ; Miyao, Masanobu. / Directional growth of Si nanowires on insulating films by electric-field-assisted metal-induced lateral crystallization. Progress in Semiconductor Materials V - Novel Materials and Electronic and Optoelectronic Applications. 2006. pp. 257-262 (Materials Research Society Symposium Proceedings).
@inproceedings{6051d1e72744449a9684aeeec9757262,
title = "Directional growth of Si nanowires on insulating films by electric-field-assisted metal-induced lateral crystallization",
abstract = "Metal-induced lateral crystallization of amorphous Si has been investigated under a wide range of electric fields (0-4000 V/cm). In the low field region (<100 V/cm), lateral growth velocity at the cathode side was enhanced by applying an electric field. This achieved formation of poly-Si with a large area (∼50 μm) during low-temperature annealing (525°C, 25 h). When the electric field exceeded 100 V/cm, the lateral growth velocity decreased with increasing the electric field strength. Under the extremely high electric field (>2000 V/cm), directional growth aligned to the electric field was observed. This new findings will be a powerful tool to achieve new poly-Si with highly controlled structures.",
author = "Hiroshi Kanno and Atsushi Kenjo and Taizoh Sadoh and Masanobu Miyao",
year = "2006",
month = "8",
day = "23",
language = "English",
isbn = "1558998454",
series = "Materials Research Society Symposium Proceedings",
pages = "257--262",
booktitle = "Progress in Semiconductor Materials V - Novel Materials and Electronic and Optoelectronic Applications",

}

TY - GEN

T1 - Directional growth of Si nanowires on insulating films by electric-field-assisted metal-induced lateral crystallization

AU - Kanno, Hiroshi

AU - Kenjo, Atsushi

AU - Sadoh, Taizoh

AU - Miyao, Masanobu

PY - 2006/8/23

Y1 - 2006/8/23

N2 - Metal-induced lateral crystallization of amorphous Si has been investigated under a wide range of electric fields (0-4000 V/cm). In the low field region (<100 V/cm), lateral growth velocity at the cathode side was enhanced by applying an electric field. This achieved formation of poly-Si with a large area (∼50 μm) during low-temperature annealing (525°C, 25 h). When the electric field exceeded 100 V/cm, the lateral growth velocity decreased with increasing the electric field strength. Under the extremely high electric field (>2000 V/cm), directional growth aligned to the electric field was observed. This new findings will be a powerful tool to achieve new poly-Si with highly controlled structures.

AB - Metal-induced lateral crystallization of amorphous Si has been investigated under a wide range of electric fields (0-4000 V/cm). In the low field region (<100 V/cm), lateral growth velocity at the cathode side was enhanced by applying an electric field. This achieved formation of poly-Si with a large area (∼50 μm) during low-temperature annealing (525°C, 25 h). When the electric field exceeded 100 V/cm, the lateral growth velocity decreased with increasing the electric field strength. Under the extremely high electric field (>2000 V/cm), directional growth aligned to the electric field was observed. This new findings will be a powerful tool to achieve new poly-Si with highly controlled structures.

UR - http://www.scopus.com/inward/record.url?scp=33747367995&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33747367995&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:33747367995

SN - 1558998454

SN - 9781558998452

T3 - Materials Research Society Symposium Proceedings

SP - 257

EP - 262

BT - Progress in Semiconductor Materials V - Novel Materials and Electronic and Optoelectronic Applications

ER -