Directional solidification of multicrystalline silicon using the accelerated crucible rotation technique

R. Bairava Ganesh, Hitoshi Matsuo, Yoshihiro Kangawa, Koji Arafune, Yoshio Ohshita, Masafumi Yamaguchi, Koichi Kakimoto

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Employing the accelerated crucible rotation technique, we grew multicrystalline silicon by the directional solidification process. The distribution of carbon concentration determined by Fourier transform infrared spectroscopy demonstrated that application of accelerated crucible rotation homogenized the carbon concentration in the grown ingot. Attempts were made to explain the effect of crucible rotation on homogenization of carbon concentration in terms of segregation phenomena. Moreover, growth striations induced by the crucible rotation were observed in the axial direction of the ingot.

Original languageEnglish
Pages (from-to)2525-2527
Number of pages3
JournalCrystal Growth and Design
Volume8
Issue number7
DOIs
Publication statusPublished - Jul 1 2008

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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