Discussion on hole traps of amorphous films of N, N ′-di(1-naphthyl)- N, N ′-diphenyl-(1,1′-biphenyl)-4,4′-diamine (α- NPD) deposited at different substrate temperatures

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Abstract

The hole current in amorphous films of N,N′-di(1-naphthyl)-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diamine (α-NPD) strongly depends on substrate temperature during vacuum deposition (Tsub) and is the highest at a Tsub value of around 275 K. However, the reason for this enhancement of hole current at this Tsub is not clearly understood. In this study, we performed thermally stimulated current (TSC) measurements, which is a versatile method used to obtain information about carrier traps, on α-NPD films. The TSC results revealed that hole traps were uniformly distributed throughout the films and that hole traps were the shallowest for films fabricated at a Tsub value of around 275 K. Thus, the shallowest hole traps at this Tsub are believed to be one reason for the highest hole current for α-NPD films. This is the demonstration of how Tsub affects carrier traps, contributing to a better understanding of the underlying physics in organic amorphous films.

Original languageEnglish
Article number173301
JournalApplied Physics Letters
Volume114
Issue number17
DOIs
Publication statusPublished - Apr 29 2019

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diamines
traps
temperature
vacuum deposition
physics
augmentation

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

@article{9ee1e92b16a8427ba1b129e2d468c5f2,
title = "Discussion on hole traps of amorphous films of N, N ′-di(1-naphthyl)- N, N ′-diphenyl-(1,1′-biphenyl)-4,4′-diamine (α- NPD) deposited at different substrate temperatures",
abstract = "The hole current in amorphous films of N,N′-di(1-naphthyl)-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diamine (α-NPD) strongly depends on substrate temperature during vacuum deposition (Tsub) and is the highest at a Tsub value of around 275 K. However, the reason for this enhancement of hole current at this Tsub is not clearly understood. In this study, we performed thermally stimulated current (TSC) measurements, which is a versatile method used to obtain information about carrier traps, on α-NPD films. The TSC results revealed that hole traps were uniformly distributed throughout the films and that hole traps were the shallowest for films fabricated at a Tsub value of around 275 K. Thus, the shallowest hole traps at this Tsub are believed to be one reason for the highest hole current for α-NPD films. This is the demonstration of how Tsub affects carrier traps, contributing to a better understanding of the underlying physics in organic amorphous films.",
author = "Yu Esaki and Toshinori Matsusima and Chihaya Adachi",
year = "2019",
month = "4",
day = "29",
doi = "10.1063/1.5089269",
language = "English",
volume = "114",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
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TY - JOUR

T1 - Discussion on hole traps of amorphous films of N, N ′-di(1-naphthyl)- N, N ′-diphenyl-(1,1′-biphenyl)-4,4′-diamine (α- NPD) deposited at different substrate temperatures

AU - Esaki, Yu

AU - Matsusima, Toshinori

AU - Adachi, Chihaya

PY - 2019/4/29

Y1 - 2019/4/29

N2 - The hole current in amorphous films of N,N′-di(1-naphthyl)-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diamine (α-NPD) strongly depends on substrate temperature during vacuum deposition (Tsub) and is the highest at a Tsub value of around 275 K. However, the reason for this enhancement of hole current at this Tsub is not clearly understood. In this study, we performed thermally stimulated current (TSC) measurements, which is a versatile method used to obtain information about carrier traps, on α-NPD films. The TSC results revealed that hole traps were uniformly distributed throughout the films and that hole traps were the shallowest for films fabricated at a Tsub value of around 275 K. Thus, the shallowest hole traps at this Tsub are believed to be one reason for the highest hole current for α-NPD films. This is the demonstration of how Tsub affects carrier traps, contributing to a better understanding of the underlying physics in organic amorphous films.

AB - The hole current in amorphous films of N,N′-di(1-naphthyl)-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diamine (α-NPD) strongly depends on substrate temperature during vacuum deposition (Tsub) and is the highest at a Tsub value of around 275 K. However, the reason for this enhancement of hole current at this Tsub is not clearly understood. In this study, we performed thermally stimulated current (TSC) measurements, which is a versatile method used to obtain information about carrier traps, on α-NPD films. The TSC results revealed that hole traps were uniformly distributed throughout the films and that hole traps were the shallowest for films fabricated at a Tsub value of around 275 K. Thus, the shallowest hole traps at this Tsub are believed to be one reason for the highest hole current for α-NPD films. This is the demonstration of how Tsub affects carrier traps, contributing to a better understanding of the underlying physics in organic amorphous films.

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