Dislocation analysis of a new method for growing large-size crystals of monocrystalline silicon using a seed casting technique

Bing Gao, Satoshi Nakano, Hirofumi Harada, Yoshiji Miyamura, Takashi Sekiguchi, Koichi Kakimoto

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

A new method is proposed for growing large-size crystals of monocrystalline silicon using a seed casting technique. The stress and dislocation distributions for this type of growth during crystallization were simulated. The results indicate that the order of dislocation density is not very large. If the cooling flux of the crystal growth is controlled to be small at the initial stage, and the annihilation and direction effects of dislocation in the Alexander and Haasen model are included, the real dislocation density could be considerably smaller than the calculated value. Therefore, the new growth method for monocrystalline silicon is promising for complete single crystal growth, effectively avoids polycrystalline nucleation, and has a moderate dislocation density.

Original languageEnglish
Pages (from-to)6144-6150
Number of pages7
JournalCrystal Growth and Design
Volume12
Issue number12
DOIs
Publication statusPublished - Dec 5 2012

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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