Dislocation behavior in seed-cast grown Si ingots based on crystallographic orientation

Karolin Jiptner, Yoshiji Miyamura, Hirofumi Harada, Bing Gao, Koichi Kakimoto, Takashi Sekiguchi

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

This study concentrates on dislocation behavior during Si growth by the seed-cast method in different crystallographic orientations. Two methods were combined: (1) Si crystal growth in different seed orientations and (2) float zone Si-annealing experiment to obtain the purely thermal stress-induced dislocation density. The main focus is on the difference between the (111) and the (100) growth directions. It is found that peripheral areas are dominated by thermal stress-induced dislocation densities. Central ingot areas are dominated by other dislocation sources. By comparing the (100) and the (111) orientations, it was found that a difference in dislocation motion exists. This difference is caused by a different activation of slip systems, causing long slip lines in the (111) orientation. It is shown that numerical simulation has problems describing this long-range dislocation slip.

Original languageEnglish
Pages (from-to)1513-1522
Number of pages10
JournalProgress in Photovoltaics: Research and Applications
Volume24
Issue number12
DOIs
Publication statusPublished - Dec 1 2016

Fingerprint

ingots
Ingots
Thermal stress
Seed
casts
seeds
Crystallization
Crystal growth
Crystal orientation
slip
Chemical activation
Annealing
thermal stresses
Computer simulation
float zones
Experiments
crystal growth
activation
annealing
Direction compound

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Dislocation behavior in seed-cast grown Si ingots based on crystallographic orientation. / Jiptner, Karolin; Miyamura, Yoshiji; Harada, Hirofumi; Gao, Bing; Kakimoto, Koichi; Sekiguchi, Takashi.

In: Progress in Photovoltaics: Research and Applications, Vol. 24, No. 12, 01.12.2016, p. 1513-1522.

Research output: Contribution to journalArticle

Jiptner, Karolin ; Miyamura, Yoshiji ; Harada, Hirofumi ; Gao, Bing ; Kakimoto, Koichi ; Sekiguchi, Takashi. / Dislocation behavior in seed-cast grown Si ingots based on crystallographic orientation. In: Progress in Photovoltaics: Research and Applications. 2016 ; Vol. 24, No. 12. pp. 1513-1522.
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