Dislocation constraint by etch-back process of seed crystal in sic bulk crystal growth

Tomohisa Kato, Naoki Ovanagi, Yasuo Kitou, Shin Ichi Nishizawa, Kazuo Arai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Dislocation constraint in the growth of SiC crystal by the modified Lely method was studied. In SiC single crystal growth, the dislocations and defects generally propagate from the seed crystal surface. However, when the etch back on the seed crystal surface in the sublimation process was performed prior to growth, defects and dislocations propagation in the interface between the seed crystal and the grow'n crystal were reasonably suppressed. The switchover from the etch back to the growth could be performed without changing the heating condition during the initial process. We noticed that the density of the hollow defects called as micropipes in the grown crystal were decreased to 1/10 compared to that of the seed crystal used. We consider the etch back proccss of the seed crystal is an effective method for constraining the defects in the SiC crystal growth.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2001
EditorsS. Yoshida, S. Nishino, H. Harima, T. Kimoto
PublisherTrans Tech Publications Ltd
Pages111-114
Number of pages4
ISBN (Print)9780878498949
DOIs
Publication statusPublished - Jan 1 2002
Externally publishedYes
EventInternational Conference on Silicon Carbide and Related Materials, ICSCRM 2001 - Tsukuba, Japan
Duration: Oct 28 2001Nov 2 2001

Publication series

NameMaterials Science Forum
Volume389-393
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Conference

ConferenceInternational Conference on Silicon Carbide and Related Materials, ICSCRM 2001
CountryJapan
CityTsukuba
Period10/28/0111/2/01

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Kato, T., Ovanagi, N., Kitou, Y., Nishizawa, S. I., & Arai, K. (2002). Dislocation constraint by etch-back process of seed crystal in sic bulk crystal growth. In S. Yoshida, S. Nishino, H. Harima, & T. Kimoto (Eds.), Silicon Carbide and Related Materials 2001 (pp. 111-114). (Materials Science Forum; Vol. 389-393). Trans Tech Publications Ltd. https://doi.org/10.4028Avww.scientific.net/MSF.389-393.111