Dislocation constraint by etch back process of seed crystal in the SiC sublimation growth

Tomohisa Kato, Shinichi Nishizawa, Kazuo Arai

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Dislocation constraint in the growth of SiC crystal by the modified Lely method was studied. In SiC single crystal growth, the dislocations and defects generally propagate from the seed crystal surface. However, when the etch back on the seed crystal surface in the sublimation process was performed prior to growth, defects and dislocation propagation in the interface between the seed crystal and the grown crystal were suppressed reasonably. The switchover from the etch back to the growth could be performed without changing heating condition during the initial process. We noticed that the density of the hollow defects called as micropipes in the grown crystal were decreased to 1/10 compared to that of the seed crystal used. We consider the etch back process of the seed crystal as an effective method for constraining the defects in the SiC crystal growth.

Original languageEnglish
Pages (from-to)219-225
Number of pages7
JournalJournal of Crystal Growth
Volume233
Issue number1-2
DOIs
Publication statusPublished - Nov 1 2001
Externally publishedYes

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Sublimation
Dislocations (crystals)
sublimation
seeds
Crystals
crystals
Crystallization
defects
Defects
crystal surfaces
crystal growth
Crystal growth
hollow
Single crystals
heating
propagation
single crystals
Heating

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Dislocation constraint by etch back process of seed crystal in the SiC sublimation growth. / Kato, Tomohisa; Nishizawa, Shinichi; Arai, Kazuo.

In: Journal of Crystal Growth, Vol. 233, No. 1-2, 01.11.2001, p. 219-225.

Research output: Contribution to journalArticle

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