Dislocation-density-based modeling of the plastic behavior of 4H-SiC single crystals using the Alexander-Haasen model

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

To dynamically model the plastic deformation of 4H-SiC single crystals during physical vapor transport (PVT) growth, the Alexander-Haasen model, originally proposed for the elemental semiconductor, is extended into IV-IV compound semiconductors. By fitting the model parameters to the experimental data, we show that the Alexander-Haasen model can describe the plastic deformation of 4H-SiC single crystals if the activation of the carbon-core partial dislocation is modeled in the high-temperature region (above 1000 C) and the silicon-core partial dislocation is modeled in the low-temperature region (below 1000 C). We then apply the same model to the dynamical deformation process of a 4H-SiC single crystal during PVT growth. The time evolution of the dislocation density is shown, and the effects of the cooling time on the final dislocation density, residual stress and stacking faults are also examined.

Original languageEnglish
Pages (from-to)215-219
Number of pages5
JournalJournal of Crystal Growth
Volume386
DOIs
Publication statusPublished - Jan 1 2014

Fingerprint

plastics
Single crystals
Plastics
single crystals
plastic deformation
Plastic deformation
Vapors
vapors
Semiconductor materials
Stacking faults
Silicon
Dislocations (crystals)
crystal defects
residual stress
Residual stresses
Carbon
Chemical activation
activation
Cooling
cooling

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

@article{caaa336f450d4b748cda98b310c4339c,
title = "Dislocation-density-based modeling of the plastic behavior of 4H-SiC single crystals using the Alexander-Haasen model",
abstract = "To dynamically model the plastic deformation of 4H-SiC single crystals during physical vapor transport (PVT) growth, the Alexander-Haasen model, originally proposed for the elemental semiconductor, is extended into IV-IV compound semiconductors. By fitting the model parameters to the experimental data, we show that the Alexander-Haasen model can describe the plastic deformation of 4H-SiC single crystals if the activation of the carbon-core partial dislocation is modeled in the high-temperature region (above 1000 C) and the silicon-core partial dislocation is modeled in the low-temperature region (below 1000 C). We then apply the same model to the dynamical deformation process of a 4H-SiC single crystal during PVT growth. The time evolution of the dislocation density is shown, and the effects of the cooling time on the final dislocation density, residual stress and stacking faults are also examined.",
author = "B. Gao and Koichi Kakimoto",
year = "2014",
month = "1",
day = "1",
doi = "10.1016/j.jcrysgro.2013.10.023",
language = "English",
volume = "386",
pages = "215--219",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",

}

TY - JOUR

T1 - Dislocation-density-based modeling of the plastic behavior of 4H-SiC single crystals using the Alexander-Haasen model

AU - Gao, B.

AU - Kakimoto, Koichi

PY - 2014/1/1

Y1 - 2014/1/1

N2 - To dynamically model the plastic deformation of 4H-SiC single crystals during physical vapor transport (PVT) growth, the Alexander-Haasen model, originally proposed for the elemental semiconductor, is extended into IV-IV compound semiconductors. By fitting the model parameters to the experimental data, we show that the Alexander-Haasen model can describe the plastic deformation of 4H-SiC single crystals if the activation of the carbon-core partial dislocation is modeled in the high-temperature region (above 1000 C) and the silicon-core partial dislocation is modeled in the low-temperature region (below 1000 C). We then apply the same model to the dynamical deformation process of a 4H-SiC single crystal during PVT growth. The time evolution of the dislocation density is shown, and the effects of the cooling time on the final dislocation density, residual stress and stacking faults are also examined.

AB - To dynamically model the plastic deformation of 4H-SiC single crystals during physical vapor transport (PVT) growth, the Alexander-Haasen model, originally proposed for the elemental semiconductor, is extended into IV-IV compound semiconductors. By fitting the model parameters to the experimental data, we show that the Alexander-Haasen model can describe the plastic deformation of 4H-SiC single crystals if the activation of the carbon-core partial dislocation is modeled in the high-temperature region (above 1000 C) and the silicon-core partial dislocation is modeled in the low-temperature region (below 1000 C). We then apply the same model to the dynamical deformation process of a 4H-SiC single crystal during PVT growth. The time evolution of the dislocation density is shown, and the effects of the cooling time on the final dislocation density, residual stress and stacking faults are also examined.

UR - http://www.scopus.com/inward/record.url?scp=84887449875&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84887449875&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2013.10.023

DO - 10.1016/j.jcrysgro.2013.10.023

M3 - Article

VL - 386

SP - 215

EP - 219

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

ER -