Dislocation effect on crystal-melt interface: An in situ observation of the melting of silicon

Yuren Wang, Koichi Kakimoto

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

X-ray diffraction topography method was employed in order to observe in situ the melting of silicon, attention being focused on the dislocation effect on the shape of crystal-melt interface. In the case of low dislocation density, the melting took place uniformly, and the shape of crystal-melt interface was flat. In the case of high dislocation density, inhomogeneous melting was observed. Therefore, the shape of crystal-melt interface was not flat. The inhomogeneous melting must be related to the existence of large amount of dislocations induced by the thermal stress.

Original languageEnglish
Pages (from-to)303-312
Number of pages10
JournalJournal of Crystal Growth
Volume208
Issue number1
DOIs
Publication statusPublished - Jan 1 2000

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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