Distribution and solubility limit of AI in Al2O 3-doped ZnO sintered body

Keita Shirouzu, Takahiro Ohkusa, Mikinori Hotta, Naoya Enomoto, Junichi Hojo

Research output: Contribution to journalArticle

66 Citations (Scopus)

Abstract

A few mol% Al2O3-doped ZnO sintered body forms a substitutional solid solution and the semi-conducting property is drastically affected by the content of the dissolved AI. It was suggested from the results of XRD and EPMA that Al existed in the ZnO sintered body in the form of ZnAl2O4. Furthermore, the distribution of ZnAl 2O4 was visualized by AFM and SEM. It was, however, difficult for these techniques to detect dissolved Al in ZnO grains directly. The SIMS mapping suggested that the trace amount of Al (approximately 0.3 atomic%) dissolved into ZnO grains because of high sensitivity for trace impurities. This result was consistent with the change in lattice constants of ZnO with Al dissolution.

Original languageEnglish
Pages (from-to)254-258
Number of pages5
JournalJournal of the Ceramic Society of Japan
Volume115
Issue number1340
DOIs
Publication statusPublished - Apr 2007

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Distribution and solubility limit of AI in Al<sub>2</sub>O <sub>3</sub>-doped ZnO sintered body'. Together they form a unique fingerprint.

  • Cite this