Distribution and solubility limit of AI in Al2O 3-doped ZnO sintered body

Keita Shirouzu; Takahiro Ohkusa; Mikinori Hotta; Naoya Enomoto; Junichi Hojo

doi:10.2109/jcersj.115.254

Distribution and solubility limit of AI in Al₂O ₃-doped ZnO sintered body

Keita Shirouzu, Takahiro Ohkusa, Mikinori Hotta, Naoya Enomoto, Junichi Hojo

Applied Fine Chemistry

Research output: Contribution to journal › Article

66 Citations (Scopus)

Abstract

A few mol% Al₂O₃-doped ZnO sintered body forms a substitutional solid solution and the semi-conducting property is drastically affected by the content of the dissolved AI. It was suggested from the results of XRD and EPMA that Al existed in the ZnO sintered body in the form of ZnAl₂O₄. Furthermore, the distribution of ZnAl ₂O₄ was visualized by AFM and SEM. It was, however, difficult for these techniques to detect dissolved Al in ZnO grains directly. The SIMS mapping suggested that the trace amount of Al (approximately 0.3 atomic%) dissolved into ZnO grains because of high sensitivity for trace impurities. This result was consistent with the change in lattice constants of ZnO with Al dissolution.

Original language	English
Pages (from-to)	254-258
Number of pages	5
Journal	Journal of the Ceramic Society of Japan
Volume	115
Issue number	1340
DOIs	https://doi.org/10.2109/jcersj.115.254
Publication status	Published - Apr 2007

All Science Journal Classification (ASJC) codes

Ceramics and Composites
Chemistry(all)
Condensed Matter Physics
Materials Chemistry

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Shirouzu, K., Ohkusa, T., Hotta, M., Enomoto, N., & Hojo, J. (2007). Distribution and solubility limit of AI in Al₂O ₃-doped ZnO sintered body. Journal of the Ceramic Society of Japan, 115(1340), 254-258. https://doi.org/10.2109/jcersj.115.254

@article{3e6f40fe974f4029b11abfaeb1600be3,

title = "Distribution and solubility limit of AI in Al2O 3-doped ZnO sintered body",

abstract = "A few mol% Al2O3-doped ZnO sintered body forms a substitutional solid solution and the semi-conducting property is drastically affected by the content of the dissolved AI. It was suggested from the results of XRD and EPMA that Al existed in the ZnO sintered body in the form of ZnAl2O4. Furthermore, the distribution of ZnAl 2O4 was visualized by AFM and SEM. It was, however, difficult for these techniques to detect dissolved Al in ZnO grains directly. The SIMS mapping suggested that the trace amount of Al (approximately 0.3 atomic%) dissolved into ZnO grains because of high sensitivity for trace impurities. This result was consistent with the change in lattice constants of ZnO with Al dissolution.",

author = "Keita Shirouzu and Takahiro Ohkusa and Mikinori Hotta and Naoya Enomoto and Junichi Hojo",

year = "2007",

month = apr,

doi = "10.2109/jcersj.115.254",

language = "English",

volume = "115",

pages = "254--258",

journal = "Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan",

issn = "1882-0743",

publisher = "Ceramic Society of Japan/Nippon Seramikkusu Kyokai",

number = "1340",

}

TY - JOUR

T1 - Distribution and solubility limit of AI in Al2O 3-doped ZnO sintered body

AU - Shirouzu, Keita

AU - Ohkusa, Takahiro

AU - Hotta, Mikinori

AU - Enomoto, Naoya

AU - Hojo, Junichi

PY - 2007/4

Y1 - 2007/4

N2 - A few mol% Al2O3-doped ZnO sintered body forms a substitutional solid solution and the semi-conducting property is drastically affected by the content of the dissolved AI. It was suggested from the results of XRD and EPMA that Al existed in the ZnO sintered body in the form of ZnAl2O4. Furthermore, the distribution of ZnAl 2O4 was visualized by AFM and SEM. It was, however, difficult for these techniques to detect dissolved Al in ZnO grains directly. The SIMS mapping suggested that the trace amount of Al (approximately 0.3 atomic%) dissolved into ZnO grains because of high sensitivity for trace impurities. This result was consistent with the change in lattice constants of ZnO with Al dissolution.

AB - A few mol% Al2O3-doped ZnO sintered body forms a substitutional solid solution and the semi-conducting property is drastically affected by the content of the dissolved AI. It was suggested from the results of XRD and EPMA that Al existed in the ZnO sintered body in the form of ZnAl2O4. Furthermore, the distribution of ZnAl 2O4 was visualized by AFM and SEM. It was, however, difficult for these techniques to detect dissolved Al in ZnO grains directly. The SIMS mapping suggested that the trace amount of Al (approximately 0.3 atomic%) dissolved into ZnO grains because of high sensitivity for trace impurities. This result was consistent with the change in lattice constants of ZnO with Al dissolution.

UR - http://www.scopus.com/inward/record.url?scp=34047237770&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34047237770&partnerID=8YFLogxK

U2 - 10.2109/jcersj.115.254

DO - 10.2109/jcersj.115.254

M3 - Article

AN - SCOPUS:34047237770

VL - 115

SP - 254

EP - 258

JO - Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan

JF - Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan

SN - 1882-0743

IS - 1340

ER -