Distribution of light elements in multicrystalline silicon for solar cells grown by directional solidification

Hitoshi Matsuo, Sho Hisamatsu, Yoshihiro Kangawa, Koichi Kakimoto

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6 Citations (Scopus)

Abstract

We investigated the relationship between the formation of small grains and the distribution of precipitates such as Si3 N4 and SiON in a multicrystalline silicon ingot grown by the unidirectional solidification method. Si3 N4 precipitates were mainly observed inside the small grain region, while SiON was mainly precipitated outside the small grain region. SiON started to precipitate before the formation of Si3 N4 precipitates. Therefore, precipitation of SiON before precipitation of Si3 N4 is a candidate in the formation of small grains.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume156
Issue number9
DOIs
Publication statusPublished - Aug 7 2009

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light elements
Silicon
Solidification
Precipitates
precipitates
Solar cells
solar cells
silicon
ingots
Ingots
solidification

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Cite this

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AU - Matsuo, Hitoshi

AU - Hisamatsu, Sho

AU - Kangawa, Yoshihiro

AU - Kakimoto, Koichi

PY - 2009/8/7

Y1 - 2009/8/7

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AB - We investigated the relationship between the formation of small grains and the distribution of precipitates such as Si3 N4 and SiON in a multicrystalline silicon ingot grown by the unidirectional solidification method. Si3 N4 precipitates were mainly observed inside the small grain region, while SiON was mainly precipitated outside the small grain region. SiON started to precipitate before the formation of Si3 N4 precipitates. Therefore, precipitation of SiON before precipitation of Si3 N4 is a candidate in the formation of small grains.

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