Distributions of light elements and their precipitations grown by unidirectional solidification method in multicrystalline silicon for solar cells

H. Matsuo, S. Hisamatsu, Y. Kangawa, K. Kakimoto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We investigated the relationship between the formation of small grains and distribution of precipitates such as Si3N4 and SiON in a multicrystalline silicon ingot grown by the unidirectional solidification method. Si3N4 precipitate was mainly observed inside the small grain region, while SiON was mainly precipitated outside there. We found that SiON started to precipitate prior to formation of Si3N 4 precipitates. Therefore, precipitation of SiON prior to precipitation of Si3N4 plays a key role in the formation of small grains.

Original languageEnglish
Title of host publicationECS Transactions - ISTC/CSTIC 2009 (CISTC)
Pages1037-1042
Number of pages6
Edition1 PART 2
DOIs
Publication statusPublished - Dec 1 2009
EventISTC/CSTIC 2009 (CISTC) - Shanghai, China
Duration: Mar 19 2009Mar 20 2009

Publication series

NameECS Transactions
Number1 PART 2
Volume18
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherISTC/CSTIC 2009 (CISTC)
CountryChina
CityShanghai
Period3/19/093/20/09

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Matsuo, H., Hisamatsu, S., Kangawa, Y., & Kakimoto, K. (2009). Distributions of light elements and their precipitations grown by unidirectional solidification method in multicrystalline silicon for solar cells. In ECS Transactions - ISTC/CSTIC 2009 (CISTC) (1 PART 2 ed., pp. 1037-1042). (ECS Transactions; Vol. 18, No. 1 PART 2). https://doi.org/10.1149/1.3096569