Domain structure and boundary in single-layer graphene grown on Cu(111) and Cu(100) films

Yui Ogawa, Baoshan Hu, Carlo M. Orofeo, Masaharu Tsuji, Ken Ichi Ikeda, Seigi Mizuno, Hiroki Hibino, Hiroki Ago

    Research output: Contribution to journalArticle

    173 Citations (Scopus)

    Abstract

    Size, orientation, and boundary of graphene domains are the current focus of chemical vapor deposition (CVD) growth because they are closely related to graphenes physical properties. Here, we study the domain structure of single-layer graphene grown by ambient pressure CVD over heteroepitaxial Cu(111) and Cu(100) films. Low energy electron microscope measurements reveal that the Cu(111) film gives uniform single-layer graphene whose orientation is consistent with the underlying Cu lattice for areas over 1 mm 2. On the other hand, single-layer graphene grown on Cu(100) film exhibits clear multidomain structure with two main orientations rotated by 30°. Moreover, a weak Raman D-band is observed along the domain boundaries for the graphene grown on the Cu(100). Our results give new insights into the growth mechanism of CVD-grown graphene over Cu metals and offer a new direction for the realization of single-crystalline graphene.

    Original languageEnglish
    Pages (from-to)219-226
    Number of pages8
    JournalJournal of Physical Chemistry Letters
    Volume3
    Issue number2
    DOIs
    Publication statusPublished - Jan 19 2012

    All Science Journal Classification (ASJC) codes

    • Materials Science(all)
    • Physical and Theoretical Chemistry

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