Dominant Timing Direct Identification for Radiation Noise due to Extended Double Pulse Test on Bare SiC MOSFET and Si RC-IGBT Chips

This paper describes a practical methodology to identify dominant switching timing directly with current dependency relative to radiation noise in switching power devices. Using an expanded double pulse test method on a half bridge circuit, it is possible to measure radiation noise as a switching characteristic the same as loss, time or switching speed. As a result, it is possible for power device makers to adjust in device development stage without building a total system. The methodology is introduced with results of power chips with different properties, SiC MOSFET and Si RC-IGBT. In future work, the results will be utilized to optimize not only the basic system but also power device structures.