Dominant Timing Direct Identification for Radiation Noise due to Extended Double Pulse Test on Bare SiC MOSFET and Si RC-IGBT Chips

Toshiya Tadakuma, Koichi Nishi, Michael Rogers, Masahito Shoyama

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper describes a practical methodology to identify dominant switching timing directly with current dependency relative to radiation noise in switching power devices. Using an expanded double pulse test method on a half bridge circuit, it is possible to measure radiation noise as a switching characteristic the same as loss, time or switching speed. As a result, it is possible for power device makers to adjust in device development stage without building a total system. The methodology is introduced with results of power chips with different properties, SiC MOSFET and Si RC-IGBT. In future work, the results will be utilized to optimize not only the basic system but also power device structures.

Original languageEnglish
Title of host publication2020 IEEE International Symposium on Electromagnetic Compatibility and Signal/Power Integrity, EMCSI 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages73-78
Number of pages6
ISBN (Electronic)9781728174303
DOIs
Publication statusPublished - Jul 2020
Event2020 IEEE International Symposium on Electromagnetic Compatibility and Signal/Power Integrity, EMCSI 2020 - Reno, United States
Duration: Jul 28 2020Aug 28 2020

Publication series

Name2020 IEEE International Symposium on Electromagnetic Compatibility and Signal/Power Integrity, EMCSI 2020

Conference

Conference2020 IEEE International Symposium on Electromagnetic Compatibility and Signal/Power Integrity, EMCSI 2020
CountryUnited States
CityReno
Period7/28/208/28/20

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality
  • Radiation
  • Signal Processing
  • Information Systems and Management

Fingerprint Dive into the research topics of 'Dominant Timing Direct Identification for Radiation Noise due to Extended Double Pulse Test on Bare SiC MOSFET and Si RC-IGBT Chips'. Together they form a unique fingerprint.

Cite this