Dopant behavior in heavily doped polycrystalline Ge1-xSnx layers prepared with pulsed laser annealing in water

Kouta Takahashi, Masashi Kurosawa, Hiroshi Ikenoue, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima

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3 Citations (Scopus)


A low-temperature process for the formation of heavily doped polycrystalline Ge (poly-Ge) layers on insulators is required to realize next-generation electronic devices. In this study, we have systematically investigated pulsed laser annealing (PLA) in flowing water for heavily doped amorphous Ge1-xSnx layers (x ≈ 0.02) with various dopants such as B, Al, Ga, In, P, As, and Sb on SiO2. It is found that the dopant density after PLA with a high laser energy is reduced when the oxidized dopant has a lower oxygen chemical potential than H2O. As a result, for the p-type doping of B, Al, Ga, and In, we obtained a high Hall hole density of 5 × 1019 cm-3 for PLA with a low energy. Consequently, the Hall hole mobility is limited to as low as 10cm2V-1 s-1. In contrast, for As and Sb doping, because the density of substitutional dopants does not decrease even after PLA with a high energy, we achieved a high Hall electron density of 6 × 1019 cm-3 and a high Hall electron mobility simultaneously. These results indicate that preventing the oxidation of dopant atoms by water is an important factor for achieving heavy doping using PLA in water.

Original languageEnglish
Article number04FJ02
JournalJapanese journal of applied physics
Issue number4
Publication statusPublished - Apr 2018

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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