Dopant homogeneity and transport properties of impurity-doped oxide nanowires

Annop Klamchuen, Takeshi Yanagida, Masaki Kanai, Kazuki Nagashima, Keisuke Oka, Shu Seki, Masaru Suzuki, Yoshiki Hidaka, Shoichi Kai, Tomoji Kawai

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Controlling and understanding an impurity doping on semiconductor oxide nanowires grown by the vapor-liquid-solid (VLS) method remains an important challenge. Homogeneous dopant distribution within oxide nanowires has been assumed without the direct evaluations to interpret the transport properties. Here we report the direct measurements of dopant distributions for Ta-doped SnO2 nanowires. We find that differences in dopant incorporations between VLS and vapor-solid growth processes give rise to a heavily doped shell surrounding an underdoped core. Thus, understanding the dopant incorporation pathways is essential to designing and controlling impurity doping on VLS grown oxide nanowires.

Original languageEnglish
Article number053107
JournalApplied Physics Letters
Volume98
Issue number5
DOIs
Publication statusPublished - Jan 31 2011

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homogeneity
nanowires
transport properties
vapors
impurities
oxides
liquids
evaluation

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Dopant homogeneity and transport properties of impurity-doped oxide nanowires. / Klamchuen, Annop; Yanagida, Takeshi; Kanai, Masaki; Nagashima, Kazuki; Oka, Keisuke; Seki, Shu; Suzuki, Masaru; Hidaka, Yoshiki; Kai, Shoichi; Kawai, Tomoji.

In: Applied Physics Letters, Vol. 98, No. 5, 053107, 31.01.2011.

Research output: Contribution to journalArticle

Klamchuen, Annop ; Yanagida, Takeshi ; Kanai, Masaki ; Nagashima, Kazuki ; Oka, Keisuke ; Seki, Shu ; Suzuki, Masaru ; Hidaka, Yoshiki ; Kai, Shoichi ; Kawai, Tomoji. / Dopant homogeneity and transport properties of impurity-doped oxide nanowires. In: Applied Physics Letters. 2011 ; Vol. 98, No. 5.
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