Dopant-segregation-controlled ZnO single-grain-boundary varistors

Yukio Sato, Masatada Yodogawa, Takahisa Yamamoto, Naoya Shibata, Yuichi Ikuhara

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

A ZnO single-grain-boundary varistor was designed using a bicrystal. Pr and Co dopant cosegregation at the boundary, key to obtain high varistic property, is optimized by controlling grain-boundary misorientation and, hence, grain-boundary atomic structure. Thus obtained single grain boundary exhibited sufficiently high varistic property. The present result opens up the possibility of single-grain-boundary varistors required for future nanoscale electronic devices.

Original languageEnglish
Article number152112
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number15
DOIs
Publication statusPublished - Jul 4 2005
Externally publishedYes

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varistors
grain boundaries
bicrystals
atomic structure
misalignment
electronics

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Sato, Y., Yodogawa, M., Yamamoto, T., Shibata, N., & Ikuhara, Y. (2005). Dopant-segregation-controlled ZnO single-grain-boundary varistors. Applied Physics Letters, 86(15), 1-3. [152112]. https://doi.org/10.1063/1.1899762

Dopant-segregation-controlled ZnO single-grain-boundary varistors. / Sato, Yukio; Yodogawa, Masatada; Yamamoto, Takahisa; Shibata, Naoya; Ikuhara, Yuichi.

In: Applied Physics Letters, Vol. 86, No. 15, 152112, 04.07.2005, p. 1-3.

Research output: Contribution to journalArticle

Sato, Y, Yodogawa, M, Yamamoto, T, Shibata, N & Ikuhara, Y 2005, 'Dopant-segregation-controlled ZnO single-grain-boundary varistors', Applied Physics Letters, vol. 86, no. 15, 152112, pp. 1-3. https://doi.org/10.1063/1.1899762
Sato, Yukio ; Yodogawa, Masatada ; Yamamoto, Takahisa ; Shibata, Naoya ; Ikuhara, Yuichi. / Dopant-segregation-controlled ZnO single-grain-boundary varistors. In: Applied Physics Letters. 2005 ; Vol. 86, No. 15. pp. 1-3.
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