Dopant-segregation-controlled ZnO single-grain-boundary varistors

Yukio Sato, Masatada Yodogawa, Takahisa Yamamoto, Naoya Shibata, Yuichi Ikuhara

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16 Citations (Scopus)

Abstract

A ZnO single-grain-boundary varistor was designed using a bicrystal. Pr and Co dopant cosegregation at the boundary, key to obtain high varistic property, is optimized by controlling grain-boundary misorientation and, hence, grain-boundary atomic structure. Thus obtained single grain boundary exhibited sufficiently high varistic property. The present result opens up the possibility of single-grain-boundary varistors required for future nanoscale electronic devices.

Original languageEnglish
Article number152112
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number15
DOIs
Publication statusPublished - Jul 4 2005
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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  • Cite this

    Sato, Y., Yodogawa, M., Yamamoto, T., Shibata, N., & Ikuhara, Y. (2005). Dopant-segregation-controlled ZnO single-grain-boundary varistors. Applied Physics Letters, 86(15), 1-3. [152112]. https://doi.org/10.1063/1.1899762