Doped organic light emitting diodes having a 650-nm-thick hole transport layer

Asuka Yamamori, Chihaya Adachi, Toshiki Koyama, Yoshio Taniguchi

Research output: Contribution to journalArticle

118 Citations (Scopus)

Abstract

We have succeeded in fabricating a thick-film organic light emitting diode having a doped hole transport layer (DHTL). The basic cell structure is anode DHTL/emitter layer/cathode. The DHTL is composed of a hole transporting polycarbonate polymer (PC-TPB-DEG) and tris(4-bromophenyl)aminium hexachloroantimonate (TBAHA) as a dopant. As an emitter, we used tris(8-hydroxyquinoline) aluminum (Alq). With a 650-nm-thick DHTL, the device showed considerable reduction in cell resistance compared with an anode/nondoped HTL/Alq/cathode device with the same HTL thickness. Although the electroluminescent quantum efficiency L was rather low in the doped device, we should be able to increase it by interposing a thin tetraphenylbendidine (TPB) layer between the DHTL and the emitter layer while keeping the driving voltage low. The anode/DHTL (650 nm)/TPB(50 nm)/Alq(50 nm)/cathode showed luminance of more than 4004cd/m2 at 10.0 V and 220mA/cm2.

Original languageEnglish
Pages (from-to)2147-2149
Number of pages3
JournalApplied Physics Letters
Volume72
Issue number17
DOIs
Publication statusPublished - Dec 1 1998

Fingerprint

light emitting diodes
emitters
anodes
cathodes
polycarbonates
luminance
cells
low voltage
thick films
quantum efficiency
aluminum
polymers

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Doped organic light emitting diodes having a 650-nm-thick hole transport layer. / Yamamori, Asuka; Adachi, Chihaya; Koyama, Toshiki; Taniguchi, Yoshio.

In: Applied Physics Letters, Vol. 72, No. 17, 01.12.1998, p. 2147-2149.

Research output: Contribution to journalArticle

Yamamori, Asuka ; Adachi, Chihaya ; Koyama, Toshiki ; Taniguchi, Yoshio. / Doped organic light emitting diodes having a 650-nm-thick hole transport layer. In: Applied Physics Letters. 1998 ; Vol. 72, No. 17. pp. 2147-2149.
@article{4653853e15f14d16a8f41cdd8dc8cbf9,
title = "Doped organic light emitting diodes having a 650-nm-thick hole transport layer",
abstract = "We have succeeded in fabricating a thick-film organic light emitting diode having a doped hole transport layer (DHTL). The basic cell structure is anode DHTL/emitter layer/cathode. The DHTL is composed of a hole transporting polycarbonate polymer (PC-TPB-DEG) and tris(4-bromophenyl)aminium hexachloroantimonate (TBAHA) as a dopant. As an emitter, we used tris(8-hydroxyquinoline) aluminum (Alq). With a 650-nm-thick DHTL, the device showed considerable reduction in cell resistance compared with an anode/nondoped HTL/Alq/cathode device with the same HTL thickness. Although the electroluminescent quantum efficiency L was rather low in the doped device, we should be able to increase it by interposing a thin tetraphenylbendidine (TPB) layer between the DHTL and the emitter layer while keeping the driving voltage low. The anode/DHTL (650 nm)/TPB(50 nm)/Alq(50 nm)/cathode showed luminance of more than 4004cd/m2 at 10.0 V and 220mA/cm2.",
author = "Asuka Yamamori and Chihaya Adachi and Toshiki Koyama and Yoshio Taniguchi",
year = "1998",
month = "12",
day = "1",
doi = "10.1063/1.121304",
language = "English",
volume = "72",
pages = "2147--2149",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "17",

}

TY - JOUR

T1 - Doped organic light emitting diodes having a 650-nm-thick hole transport layer

AU - Yamamori, Asuka

AU - Adachi, Chihaya

AU - Koyama, Toshiki

AU - Taniguchi, Yoshio

PY - 1998/12/1

Y1 - 1998/12/1

N2 - We have succeeded in fabricating a thick-film organic light emitting diode having a doped hole transport layer (DHTL). The basic cell structure is anode DHTL/emitter layer/cathode. The DHTL is composed of a hole transporting polycarbonate polymer (PC-TPB-DEG) and tris(4-bromophenyl)aminium hexachloroantimonate (TBAHA) as a dopant. As an emitter, we used tris(8-hydroxyquinoline) aluminum (Alq). With a 650-nm-thick DHTL, the device showed considerable reduction in cell resistance compared with an anode/nondoped HTL/Alq/cathode device with the same HTL thickness. Although the electroluminescent quantum efficiency L was rather low in the doped device, we should be able to increase it by interposing a thin tetraphenylbendidine (TPB) layer between the DHTL and the emitter layer while keeping the driving voltage low. The anode/DHTL (650 nm)/TPB(50 nm)/Alq(50 nm)/cathode showed luminance of more than 4004cd/m2 at 10.0 V and 220mA/cm2.

AB - We have succeeded in fabricating a thick-film organic light emitting diode having a doped hole transport layer (DHTL). The basic cell structure is anode DHTL/emitter layer/cathode. The DHTL is composed of a hole transporting polycarbonate polymer (PC-TPB-DEG) and tris(4-bromophenyl)aminium hexachloroantimonate (TBAHA) as a dopant. As an emitter, we used tris(8-hydroxyquinoline) aluminum (Alq). With a 650-nm-thick DHTL, the device showed considerable reduction in cell resistance compared with an anode/nondoped HTL/Alq/cathode device with the same HTL thickness. Although the electroluminescent quantum efficiency L was rather low in the doped device, we should be able to increase it by interposing a thin tetraphenylbendidine (TPB) layer between the DHTL and the emitter layer while keeping the driving voltage low. The anode/DHTL (650 nm)/TPB(50 nm)/Alq(50 nm)/cathode showed luminance of more than 4004cd/m2 at 10.0 V and 220mA/cm2.

UR - http://www.scopus.com/inward/record.url?scp=0001008582&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0001008582&partnerID=8YFLogxK

U2 - 10.1063/1.121304

DO - 10.1063/1.121304

M3 - Article

AN - SCOPUS:0001008582

VL - 72

SP - 2147

EP - 2149

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 17

ER -