Abstract
Previous simulation works and experiments on the loss of 4H-SiC floating junction Schottky barrier diodes (Super-SBDs) show that the loss is related to the doping concentration in the drift region and the pattern of the floating layer. The effect of the doping concentration for lowering the loss is characterized the breakdown voltage (Vbd) and the on-state resistances (RonS) of the Super-SBDs based on Baliga's figure of Merit (BFOM). Experimental devices with two doping concentrations in the drift region are fabricated to investigate the static characteristics: Vbd and RonS. The Vbd of the Super-SBDs is close to the simulation result, near 3000 V. However the tendency of the Vbd by the doping concentration is not similar to the simulation result. And the RonS are about 3.22 mΩcm2 which is higher than that of simulation result. The doping concentration optimized in this study does not show significant lowering loss and the design of the floating layer in the termination region affect the low-loss static characteristics of the Super-SBD. In addition, adopting PiN structure with floating layer (Super-PiN) affects the low-loss dynamic characteristics, optimizing the doping concentration in the drift region. We conclude that the fabricated Super-SBDs with the floating layer in the termination region, the drift region with a doping concentration of 1.0×1016 cm-3 and mesa-shaped termination structure, have excellent Vbd of 2990 V which is almost same as that of simulation result and RonS of 3.22 mΩcm2.
| Original language | English |
|---|---|
| Title of host publication | Silicon Carbide and Related Materials 2008 |
| Subtitle of host publication | ECSCRM 2008 |
| Pages | 655-658 |
| Number of pages | 4 |
| DOIs | |
| Publication status | Published - Dec 1 2009 |
| Externally published | Yes |
| Event | 7th European Conference on Silicon Carbide and Related Materials, ECSCRM 2008 - Barcelona, Spain Duration: Sep 7 2008 → Sep 11 2008 |
Publication series
| Name | Materials Science Forum |
|---|---|
| Volume | 615 617 |
| ISSN (Print) | 0255-5476 |
Other
| Other | 7th European Conference on Silicon Carbide and Related Materials, ECSCRM 2008 |
|---|---|
| Country | Spain |
| City | Barcelona |
| Period | 9/7/08 → 9/11/08 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
Cite this
Doping concentration optimization for ultra-low-loss 4H-SiC floating junction Schottky barrier diode (Super-SBD). / Ota, C.; Nishio, J.; Takao, K.; Hatakeyama, T.; Shinohe, T.; Kojima, K.; Nishizawa, Shinichi; Ohashi, H.
Silicon Carbide and Related Materials 2008: ECSCRM 2008. 2009. p. 655-658 (Materials Science Forum; Vol. 615 617).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Doping concentration optimization for ultra-low-loss 4H-SiC floating junction Schottky barrier diode (Super-SBD)
AU - Ota, C.
AU - Nishio, J.
AU - Takao, K.
AU - Hatakeyama, T.
AU - Shinohe, T.
AU - Kojima, K.
AU - Nishizawa, Shinichi
AU - Ohashi, H.
PY - 2009/12/1
Y1 - 2009/12/1
N2 - Previous simulation works and experiments on the loss of 4H-SiC floating junction Schottky barrier diodes (Super-SBDs) show that the loss is related to the doping concentration in the drift region and the pattern of the floating layer. The effect of the doping concentration for lowering the loss is characterized the breakdown voltage (Vbd) and the on-state resistances (RonS) of the Super-SBDs based on Baliga's figure of Merit (BFOM). Experimental devices with two doping concentrations in the drift region are fabricated to investigate the static characteristics: Vbd and RonS. The Vbd of the Super-SBDs is close to the simulation result, near 3000 V. However the tendency of the Vbd by the doping concentration is not similar to the simulation result. And the RonS are about 3.22 mΩcm2 which is higher than that of simulation result. The doping concentration optimized in this study does not show significant lowering loss and the design of the floating layer in the termination region affect the low-loss static characteristics of the Super-SBD. In addition, adopting PiN structure with floating layer (Super-PiN) affects the low-loss dynamic characteristics, optimizing the doping concentration in the drift region. We conclude that the fabricated Super-SBDs with the floating layer in the termination region, the drift region with a doping concentration of 1.0×1016 cm-3 and mesa-shaped termination structure, have excellent Vbd of 2990 V which is almost same as that of simulation result and RonS of 3.22 mΩcm2.
AB - Previous simulation works and experiments on the loss of 4H-SiC floating junction Schottky barrier diodes (Super-SBDs) show that the loss is related to the doping concentration in the drift region and the pattern of the floating layer. The effect of the doping concentration for lowering the loss is characterized the breakdown voltage (Vbd) and the on-state resistances (RonS) of the Super-SBDs based on Baliga's figure of Merit (BFOM). Experimental devices with two doping concentrations in the drift region are fabricated to investigate the static characteristics: Vbd and RonS. The Vbd of the Super-SBDs is close to the simulation result, near 3000 V. However the tendency of the Vbd by the doping concentration is not similar to the simulation result. And the RonS are about 3.22 mΩcm2 which is higher than that of simulation result. The doping concentration optimized in this study does not show significant lowering loss and the design of the floating layer in the termination region affect the low-loss static characteristics of the Super-SBD. In addition, adopting PiN structure with floating layer (Super-PiN) affects the low-loss dynamic characteristics, optimizing the doping concentration in the drift region. We conclude that the fabricated Super-SBDs with the floating layer in the termination region, the drift region with a doping concentration of 1.0×1016 cm-3 and mesa-shaped termination structure, have excellent Vbd of 2990 V which is almost same as that of simulation result and RonS of 3.22 mΩcm2.
UR - http://www.scopus.com/inward/record.url?scp=79251564425&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79251564425&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/MSF.615-617.655
DO - 10.4028/www.scientific.net/MSF.615-617.655
M3 - Conference contribution
AN - SCOPUS:79251564425
SN - 9780878493340
T3 - Materials Science Forum
SP - 655
EP - 658
BT - Silicon Carbide and Related Materials 2008
ER -