Doping concentration optimization for ultra-low-loss 4H-SiC floating junction Schottky barrier diode (Super-SBD)

C. Ota, J. Nishio, K. Takao, T. Hatakeyama, T. Shinohe, K. Kojima, Shinichi Nishizawa, H. Ohashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Previous simulation works and experiments on the loss of 4H-SiC floating junction Schottky barrier diodes (Super-SBDs) show that the loss is related to the doping concentration in the drift region and the pattern of the floating layer. The effect of the doping concentration for lowering the loss is characterized the breakdown voltage (Vbd) and the on-state resistances (RonS) of the Super-SBDs based on Baliga's figure of Merit (BFOM). Experimental devices with two doping concentrations in the drift region are fabricated to investigate the static characteristics: Vbd and RonS. The Vbd of the Super-SBDs is close to the simulation result, near 3000 V. However the tendency of the Vbd by the doping concentration is not similar to the simulation result. And the RonS are about 3.22 mΩcm2 which is higher than that of simulation result. The doping concentration optimized in this study does not show significant lowering loss and the design of the floating layer in the termination region affect the low-loss static characteristics of the Super-SBD. In addition, adopting PiN structure with floating layer (Super-PiN) affects the low-loss dynamic characteristics, optimizing the doping concentration in the drift region. We conclude that the fabricated Super-SBDs with the floating layer in the termination region, the drift region with a doping concentration of 1.0×1016 cm-3 and mesa-shaped termination structure, have excellent Vbd of 2990 V which is almost same as that of simulation result and RonS of 3.22 mΩcm2.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2008
Subtitle of host publicationECSCRM 2008
Pages655-658
Number of pages4
DOIs
Publication statusPublished - Dec 1 2009
Externally publishedYes
Event7th European Conference on Silicon Carbide and Related Materials, ECSCRM 2008 - Barcelona, Spain
Duration: Sep 7 2008Sep 11 2008

Publication series

NameMaterials Science Forum
Volume615 617
ISSN (Print)0255-5476

Other

Other7th European Conference on Silicon Carbide and Related Materials, ECSCRM 2008
CountrySpain
CityBarcelona
Period9/7/089/11/08

Fingerprint

Schottky barrier diodes
Schottky diodes
floating
Doping (additives)
optimization
static characteristics
simulation
mesas
Electric breakdown
electrical faults
figure of merit
dynamic characteristics
tendencies

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Ota, C., Nishio, J., Takao, K., Hatakeyama, T., Shinohe, T., Kojima, K., ... Ohashi, H. (2009). Doping concentration optimization for ultra-low-loss 4H-SiC floating junction Schottky barrier diode (Super-SBD). In Silicon Carbide and Related Materials 2008: ECSCRM 2008 (pp. 655-658). (Materials Science Forum; Vol. 615 617). https://doi.org/10.4028/www.scientific.net/MSF.615-617.655

Doping concentration optimization for ultra-low-loss 4H-SiC floating junction Schottky barrier diode (Super-SBD). / Ota, C.; Nishio, J.; Takao, K.; Hatakeyama, T.; Shinohe, T.; Kojima, K.; Nishizawa, Shinichi; Ohashi, H.

Silicon Carbide and Related Materials 2008: ECSCRM 2008. 2009. p. 655-658 (Materials Science Forum; Vol. 615 617).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ota, C, Nishio, J, Takao, K, Hatakeyama, T, Shinohe, T, Kojima, K, Nishizawa, S & Ohashi, H 2009, Doping concentration optimization for ultra-low-loss 4H-SiC floating junction Schottky barrier diode (Super-SBD). in Silicon Carbide and Related Materials 2008: ECSCRM 2008. Materials Science Forum, vol. 615 617, pp. 655-658, 7th European Conference on Silicon Carbide and Related Materials, ECSCRM 2008, Barcelona, Spain, 9/7/08. https://doi.org/10.4028/www.scientific.net/MSF.615-617.655
Ota C, Nishio J, Takao K, Hatakeyama T, Shinohe T, Kojima K et al. Doping concentration optimization for ultra-low-loss 4H-SiC floating junction Schottky barrier diode (Super-SBD). In Silicon Carbide and Related Materials 2008: ECSCRM 2008. 2009. p. 655-658. (Materials Science Forum). https://doi.org/10.4028/www.scientific.net/MSF.615-617.655
Ota, C. ; Nishio, J. ; Takao, K. ; Hatakeyama, T. ; Shinohe, T. ; Kojima, K. ; Nishizawa, Shinichi ; Ohashi, H. / Doping concentration optimization for ultra-low-loss 4H-SiC floating junction Schottky barrier diode (Super-SBD). Silicon Carbide and Related Materials 2008: ECSCRM 2008. 2009. pp. 655-658 (Materials Science Forum).
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AU - Hatakeyama, T.

AU - Shinohe, T.

AU - Kojima, K.

AU - Nishizawa, Shinichi

AU - Ohashi, H.

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