The doping dependence of the hole-number distribution on the CuO2 plane and the superconducting transition temperature Tc is investigated using the two-dimensional d-p model on the basis of a renormalized perturbation of the Fermi liquid: first forming the quasiparticles variationally by the Gutzwiller approximation taking into account the strong on-site repulsion Ud at Cu sites, then treating the residual interactions among quasiparticles by the RPA. The Gutzwiller variational state describes well the electronic state around the Fermi level and accounts for the systematic doping dependence of the hole-number distribution on Cu and O sites which has been measured by Asayama et al. using the NQR technique. Then the doping dependence of Tc is naturally understood by the charge-fluctuation mediated dxy pairing scenario where the role of the repulsive interaction Upd between the nearest-neighbor Cu and O sites is crucial.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Energy Engineering and Power Technology
- Electrical and Electronic Engineering