Doping dependence of hole-number distribution on CuO2 plane and superconducting transition temperature of high-Tc cuprates by dxy pairing scenario

T. Tsuji, Osamu Narikiyo, K. Miyake

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9 Citations (Scopus)

Abstract

The doping dependence of the hole-number distribution on the CuO2 plane and the superconducting transition temperature Tc is investigated using the two-dimensional d-p model on the basis of a renormalized perturbation of the Fermi liquid: first forming the quasiparticles variationally by the Gutzwiller approximation taking into account the strong on-site repulsion Ud at Cu sites, then treating the residual interactions among quasiparticles by the RPA. The Gutzwiller variational state describes well the electronic state around the Fermi level and accounts for the systematic doping dependence of the hole-number distribution on Cu and O sites which has been measured by Asayama et al. using the NQR technique. Then the doping dependence of Tc is naturally understood by the charge-fluctuation mediated dxy pairing scenario where the role of the repulsive interaction Upd between the nearest-neighbor Cu and O sites is crucial.

Original languageEnglish
Pages (from-to)311-320
Number of pages10
JournalPhysica C: Superconductivity and its applications
Volume244
Issue number3-4
DOIs
Publication statusPublished - Mar 20 1995

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cuprates
Superconducting transition temperature
transition temperature
Doping (additives)
Fermi liquids
Electronic states
Fermi level
interactions
perturbation
approximation
electronics

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

Cite this

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AU - Miyake, K.

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N2 - The doping dependence of the hole-number distribution on the CuO2 plane and the superconducting transition temperature Tc is investigated using the two-dimensional d-p model on the basis of a renormalized perturbation of the Fermi liquid: first forming the quasiparticles variationally by the Gutzwiller approximation taking into account the strong on-site repulsion Ud at Cu sites, then treating the residual interactions among quasiparticles by the RPA. The Gutzwiller variational state describes well the electronic state around the Fermi level and accounts for the systematic doping dependence of the hole-number distribution on Cu and O sites which has been measured by Asayama et al. using the NQR technique. Then the doping dependence of Tc is naturally understood by the charge-fluctuation mediated dxy pairing scenario where the role of the repulsive interaction Upd between the nearest-neighbor Cu and O sites is crucial.

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