Doping effects in InN/GaN short-period quantum well structures - Theoretical studies based on density functional methods

Pawel Strak, Pawel Kempisty, Konrad Sakowski, Stanislaw Krukowski

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

Density functional theory studies were conducted to determine an influence of the carrier concentration on the optical and electronic properties of InN/GaN superlattice system. The oscillator strength values, energy gaps and the band profiles were obtained. The band profiles were found to be strongly affected for technically possible heavy n-type doping while for p-type doping the carrier influence, both screening and band shift, is negligible. Blue shift of the transition energy between conduction band minima and valence band maxima was observed for high concentrations of both type carriers.

Original languageEnglish
Pages (from-to)652-656
Number of pages5
JournalJournal of Crystal Growth
Volume401
DOIs
Publication statusPublished - Sep 1 2014
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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