Dose-dependent etching selectivity in SiO2 by focused ion beam

Taizoh Sadoh, Hiroomi Eguchi, Atsushi Kenjo, Masanobu Miyao

Research output: Contribution to journalArticle

Abstract

The dose-dependent etching characteristics of SiO2 films irradiated with 40 keV Si2+ focused ion beams (FIBs) were comprehensively investigated. The etching rate in a buffered HF increased with increasing dose (8 × 1013-1 × 1015 cm-2), however it decreased for doses exceeding a critical value (1 × 1015 cm-2). The maximum selectivity of the etching rate of the irradiated region to the nonirradiated region was about 14, which was obtained for irradiation with the critical dose. The numerical simulation indicated that all of the Si atoms in SiO2 were displaced by irradiation with this critical dose. A simple model for the etching characteristics was proposed, in which the enhancement of etching by vacancies and the retardation of etching by implanted Si atoms were considered. The etching characteristics obtained by the experiments were quantitatively explained by the model.

Original languageEnglish
Pages (from-to)1855-1858
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume42
Issue number4 B
Publication statusPublished - Apr 1 2003

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Focused ion beams
Etching
selectivity
ion beams
etching
dosage
Dosimetry
Irradiation
Atoms
irradiation
Vacancies
atoms
augmentation
Computer simulation

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Dose-dependent etching selectivity in SiO2 by focused ion beam. / Sadoh, Taizoh; Eguchi, Hiroomi; Kenjo, Atsushi; Miyao, Masanobu.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 42, No. 4 B, 01.04.2003, p. 1855-1858.

Research output: Contribution to journalArticle

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