Dose rate dependence of ion-induced-damage in Si evaluated by spectroscopic ellipsometry

Y. Murakami; H. Yamauchi; T. Sadoh; A. Kenjo; M. Miyao

doi:10.4028/www.scientific.net/ssp.78-79.341

Dose rate dependence of ion-induced-damage in Si evaluated by spectroscopic ellipsometry

Y. Murakami, H. Yamauchi, T. Sadoh, A. Kenjo, M. Miyao

Electronic Devices

Research output: Contribution to journal › Conference article › peer-review

5 Citations (Scopus)

Abstract

Ion-induced-damage in Si formed by Ar⁺ at 25 keV was investigated. Ion irradiation was performed at 25-250°C to various doses (2×10¹³-5×10¹⁵ cm^-2) with dose rates (3×10¹¹-6×10¹² cm^-2s^-1). The amorphicity of irradiated surface layers was evaluated by using spectroscopic ellipsometry. For samples irradiated at temperatures above 50°C, dose rate dependence of amorphicity was observed. The Arrhenius plot of the defect relaxation rate showed that the activation energy for the defect relaxation was 0.4 eV. The value suggested that the defect relaxation was limited by the migration of the neutral vacancy.

Original language	English
Pages (from-to)	341-344
Number of pages	4
Journal	Solid State Phenomena
Volume	78-79
DOIs	https://doi.org/10.4028/www.scientific.net/ssp.78-79.341
Publication status	Published - 2001
Event	6th International Workshop on Beam Injection assesment of Microstructures in Semiconductors (BIAMS 2000) - Fukuoka, Japan Duration: Nov 12 2000 → Nov 16 2000

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Materials Science(all)
Condensed Matter Physics

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Cite this

@article{7cfc0feb066d4bd39989a9d5d8534e15,

title = "Dose rate dependence of ion-induced-damage in Si evaluated by spectroscopic ellipsometry",

abstract = "Ion-induced-damage in Si formed by Ar+ at 25 keV was investigated. Ion irradiation was performed at 25-250°C to various doses (2×1013-5×1015 cm-2) with dose rates (3×1011-6×1012 cm-2s-1). The amorphicity of irradiated surface layers was evaluated by using spectroscopic ellipsometry. For samples irradiated at temperatures above 50°C, dose rate dependence of amorphicity was observed. The Arrhenius plot of the defect relaxation rate showed that the activation energy for the defect relaxation was 0.4 eV. The value suggested that the defect relaxation was limited by the migration of the neutral vacancy.",

author = "Y. Murakami and H. Yamauchi and T. Sadoh and A. Kenjo and M. Miyao",

note = "Copyright: Copyright 2020 Elsevier B.V., All rights reserved.; 6th International Workshop on Beam Injection assesment of Microstructures in Semiconductors (BIAMS 2000) ; Conference date: 12-11-2000 Through 16-11-2000",

year = "2001",

doi = "10.4028/www.scientific.net/ssp.78-79.341",

language = "English",

volume = "78-79",

pages = "341--344",

journal = "Solid State Phenomena",

issn = "1012-0394",

publisher = "Scientific.net",

}

TY - JOUR

T1 - Dose rate dependence of ion-induced-damage in Si evaluated by spectroscopic ellipsometry

AU - Murakami, Y.

AU - Yamauchi, H.

AU - Sadoh, T.

AU - Kenjo, A.

AU - Miyao, M.

PY - 2001

Y1 - 2001

N2 - Ion-induced-damage in Si formed by Ar+ at 25 keV was investigated. Ion irradiation was performed at 25-250°C to various doses (2×1013-5×1015 cm-2) with dose rates (3×1011-6×1012 cm-2s-1). The amorphicity of irradiated surface layers was evaluated by using spectroscopic ellipsometry. For samples irradiated at temperatures above 50°C, dose rate dependence of amorphicity was observed. The Arrhenius plot of the defect relaxation rate showed that the activation energy for the defect relaxation was 0.4 eV. The value suggested that the defect relaxation was limited by the migration of the neutral vacancy.

AB - Ion-induced-damage in Si formed by Ar+ at 25 keV was investigated. Ion irradiation was performed at 25-250°C to various doses (2×1013-5×1015 cm-2) with dose rates (3×1011-6×1012 cm-2s-1). The amorphicity of irradiated surface layers was evaluated by using spectroscopic ellipsometry. For samples irradiated at temperatures above 50°C, dose rate dependence of amorphicity was observed. The Arrhenius plot of the defect relaxation rate showed that the activation energy for the defect relaxation was 0.4 eV. The value suggested that the defect relaxation was limited by the migration of the neutral vacancy.

UR - http://www.scopus.com/inward/record.url?scp=0035008654&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035008654&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/ssp.78-79.341

DO - 10.4028/www.scientific.net/ssp.78-79.341

M3 - Conference article

AN - SCOPUS:0035008654

VL - 78-79

SP - 341

EP - 344

JO - Solid State Phenomena

JF - Solid State Phenomena

SN - 1012-0394

T2 - 6th International Workshop on Beam Injection assesment of Microstructures in Semiconductors (BIAMS 2000)

Y2 - 12 November 2000 through 16 November 2000

ER -

Dose rate dependence of ion-induced-damage in Si evaluated by spectroscopic ellipsometry

Abstract

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