Abstract
Ion-induced-damage in Si formed by Ar+ at 25 keV was investigated. Ion irradiation was performed at 25-250°C to various doses (2×1013-5×1015 cm-2) with dose rates (3×1011-6×1012 cm-2s-1). The amorphicity of irradiated surface layers was evaluated by using spectroscopic ellipsometry. For samples irradiated at temperatures above 50°C, dose rate dependence of amorphicity was observed. The Arrhenius plot of the defect relaxation rate showed that the activation energy for the defect relaxation was 0.4 eV. The value suggested that the defect relaxation was limited by the migration of the neutral vacancy.
Original language | English |
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Pages (from-to) | 341-344 |
Number of pages | 4 |
Journal | Solid State Phenomena |
Volume | 78-79 |
DOIs | |
Publication status | Published - 2001 |
Event | 6th International Workshop on Beam Injection assesment of Microstructures in Semiconductors (BIAMS 2000) - Fukuoka, Japan Duration: Nov 12 2000 → Nov 16 2000 |
All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics
- Materials Science(all)
- Condensed Matter Physics