Abstract
Ion-induced-damage in Si formed by Ar+ at 25 keV was investigated. Ion irradiation was performed at 25-250°C to various doses (2×1013-5×1015 cm-2) with dose rates (3×1011-6×1012 cm-2s-1). The amorphicity of irradiated surface layers was evaluated by using spectroscopic ellipsometry. For samples irradiated at temperatures above 50°C, dose rate dependence of amorphicity was observed. The Arrhenius plot of the defect relaxation rate showed that the activation energy for the defect relaxation was 0.4 eV. The value suggested that the defect relaxation was limited by the migration of the neutral vacancy.
| Original language | English |
|---|---|
| Pages (from-to) | 341-344 |
| Number of pages | 4 |
| Journal | Solid State Phenomena |
| Volume | 78-79 |
| Publication status | Published - Jan 1 2001 |
| Event | 6th International Workshop on Beam Injection assesment of Microstructures in Semiconductors (BIAMS 2000) - Fukuoka, Japan Duration: Nov 12 2000 → Nov 16 2000 |
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All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics
- Materials Science(all)
- Condensed Matter Physics
Cite this
Dose rate dependence of ion-induced-damage in Si evaluated by spectroscopic ellipsometry. / Murakami, Y.; Yamauchi, H.; Sadoh, T.; Kenjo, A.; Miyao, M.
In: Solid State Phenomena, Vol. 78-79, 01.01.2001, p. 341-344.Research output: Contribution to journal › Conference article
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TY - JOUR
T1 - Dose rate dependence of ion-induced-damage in Si evaluated by spectroscopic ellipsometry
AU - Murakami, Y.
AU - Yamauchi, H.
AU - Sadoh, T.
AU - Kenjo, A.
AU - Miyao, M.
PY - 2001/1/1
Y1 - 2001/1/1
N2 - Ion-induced-damage in Si formed by Ar+ at 25 keV was investigated. Ion irradiation was performed at 25-250°C to various doses (2×1013-5×1015 cm-2) with dose rates (3×1011-6×1012 cm-2s-1). The amorphicity of irradiated surface layers was evaluated by using spectroscopic ellipsometry. For samples irradiated at temperatures above 50°C, dose rate dependence of amorphicity was observed. The Arrhenius plot of the defect relaxation rate showed that the activation energy for the defect relaxation was 0.4 eV. The value suggested that the defect relaxation was limited by the migration of the neutral vacancy.
AB - Ion-induced-damage in Si formed by Ar+ at 25 keV was investigated. Ion irradiation was performed at 25-250°C to various doses (2×1013-5×1015 cm-2) with dose rates (3×1011-6×1012 cm-2s-1). The amorphicity of irradiated surface layers was evaluated by using spectroscopic ellipsometry. For samples irradiated at temperatures above 50°C, dose rate dependence of amorphicity was observed. The Arrhenius plot of the defect relaxation rate showed that the activation energy for the defect relaxation was 0.4 eV. The value suggested that the defect relaxation was limited by the migration of the neutral vacancy.
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M3 - Conference article
AN - SCOPUS:0035008654
VL - 78-79
SP - 341
EP - 344
JO - Solid State Phenomena
JF - Solid State Phenomena
SN - 1012-0394
ER -