Dose rate dependence of ion-induced-damage in Si evaluated by spectroscopic ellipsometry

Y. Murakami, H. Yamauchi, T. Sadoh, A. Kenjo, M. Miyao

Research output: Contribution to journalConference articlepeer-review

5 Citations (Scopus)

Abstract

Ion-induced-damage in Si formed by Ar+ at 25 keV was investigated. Ion irradiation was performed at 25-250°C to various doses (2×1013-5×1015 cm-2) with dose rates (3×1011-6×1012 cm-2s-1). The amorphicity of irradiated surface layers was evaluated by using spectroscopic ellipsometry. For samples irradiated at temperatures above 50°C, dose rate dependence of amorphicity was observed. The Arrhenius plot of the defect relaxation rate showed that the activation energy for the defect relaxation was 0.4 eV. The value suggested that the defect relaxation was limited by the migration of the neutral vacancy.

Original languageEnglish
Pages (from-to)341-344
Number of pages4
JournalSolid State Phenomena
Volume78-79
DOIs
Publication statusPublished - 2001
Event6th International Workshop on Beam Injection assesment of Microstructures in Semiconductors (BIAMS 2000) - Fukuoka, Japan
Duration: Nov 12 2000Nov 16 2000

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics

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