Dramatic enhancement of low electric-field hole mobility in metal source/drain Ge p-channel metal-oxide-semiconductor field-effect transistors by introduction of Al and Hf into SiO2/GeO2 gate stack

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

Ge p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) are fabricated using HfGe metal source/drain contacts and an Al/SiO 2/GeO2 gate stack. Following postmetallization annealing at 400 °C, the MOSFET shows peak field-effect mobility (μh) of 336 cm2/Vs. Insertion of a Hf layer between the Al and SiO 2 layers increases the peak μh to 919 cm 2/Vs, which is associated with a positive shift of threshold voltage. We propose a model involving compensation of positive interface trapped and oxide fixed charges by negative oxide fixed charges introduced by Al and Hf in the gate stack. This leads to a decrease in Coulomb scattering, dramatically enhancing mobility.

Original languageEnglish
Article number122106
JournalApplied Physics Letters
Volume103
Issue number12
DOIs
Publication statusPublished - Sep 16 2013

Fingerprint

hole mobility
metal oxide semiconductors
field effect transistors
oxides
electric fields
augmentation
threshold voltage
metals
insertion
annealing
shift
scattering

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

@article{114bd849c1b1474680ec3864ef551e47,
title = "Dramatic enhancement of low electric-field hole mobility in metal source/drain Ge p-channel metal-oxide-semiconductor field-effect transistors by introduction of Al and Hf into SiO2/GeO2 gate stack",
abstract = "Ge p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) are fabricated using HfGe metal source/drain contacts and an Al/SiO 2/GeO2 gate stack. Following postmetallization annealing at 400 °C, the MOSFET shows peak field-effect mobility (μh) of 336 cm2/Vs. Insertion of a Hf layer between the Al and SiO 2 layers increases the peak μh to 919 cm 2/Vs, which is associated with a positive shift of threshold voltage. We propose a model involving compensation of positive interface trapped and oxide fixed charges by negative oxide fixed charges introduced by Al and Hf in the gate stack. This leads to a decrease in Coulomb scattering, dramatically enhancing mobility.",
author = "Keisuke Yamamoto and Takahiro Sada and Dong Wang and Hiroshi Nakashima",
year = "2013",
month = "9",
day = "16",
doi = "10.1063/1.4821546",
language = "English",
volume = "103",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "12",

}

TY - JOUR

T1 - Dramatic enhancement of low electric-field hole mobility in metal source/drain Ge p-channel metal-oxide-semiconductor field-effect transistors by introduction of Al and Hf into SiO2/GeO2 gate stack

AU - Yamamoto, Keisuke

AU - Sada, Takahiro

AU - Wang, Dong

AU - Nakashima, Hiroshi

PY - 2013/9/16

Y1 - 2013/9/16

N2 - Ge p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) are fabricated using HfGe metal source/drain contacts and an Al/SiO 2/GeO2 gate stack. Following postmetallization annealing at 400 °C, the MOSFET shows peak field-effect mobility (μh) of 336 cm2/Vs. Insertion of a Hf layer between the Al and SiO 2 layers increases the peak μh to 919 cm 2/Vs, which is associated with a positive shift of threshold voltage. We propose a model involving compensation of positive interface trapped and oxide fixed charges by negative oxide fixed charges introduced by Al and Hf in the gate stack. This leads to a decrease in Coulomb scattering, dramatically enhancing mobility.

AB - Ge p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) are fabricated using HfGe metal source/drain contacts and an Al/SiO 2/GeO2 gate stack. Following postmetallization annealing at 400 °C, the MOSFET shows peak field-effect mobility (μh) of 336 cm2/Vs. Insertion of a Hf layer between the Al and SiO 2 layers increases the peak μh to 919 cm 2/Vs, which is associated with a positive shift of threshold voltage. We propose a model involving compensation of positive interface trapped and oxide fixed charges by negative oxide fixed charges introduced by Al and Hf in the gate stack. This leads to a decrease in Coulomb scattering, dramatically enhancing mobility.

UR - http://www.scopus.com/inward/record.url?scp=84884870833&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84884870833&partnerID=8YFLogxK

U2 - 10.1063/1.4821546

DO - 10.1063/1.4821546

M3 - Article

AN - SCOPUS:84884870833

VL - 103

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 12

M1 - 122106

ER -