Dramatic enhancement of low electric-field hole mobility in metal source/drain Ge p-channel metal-oxide-semiconductor field-effect transistors by introduction of Al and Hf into SiO2/GeO2 gate stack

Keisuke Yamamoto; Takahiro Sada; Dong Wang; Hiroshi Nakashima

doi:10.1063/1.4821546

Dramatic enhancement of low electric-field hole mobility in metal source/drain Ge p-channel metal-oxide-semiconductor field-effect transistors by introduction of Al and Hf into SiO₂/GeO₂ gate stack

Keisuke Yamamoto, Takahiro Sada, Dong Wang, Hiroshi Nakashima

Research output: Contribution to journal › Article › peer-review

26 Citations (Scopus)

Abstract

Ge p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) are fabricated using HfGe metal source/drain contacts and an Al/SiO ₂/GeO₂ gate stack. Following postmetallization annealing at 400 °C, the MOSFET shows peak field-effect mobility (μ_h) of 336 cm²/Vs. Insertion of a Hf layer between the Al and SiO ₂ layers increases the peak μ_h to 919 cm ²/Vs, which is associated with a positive shift of threshold voltage. We propose a model involving compensation of positive interface trapped and oxide fixed charges by negative oxide fixed charges introduced by Al and Hf in the gate stack. This leads to a decrease in Coulomb scattering, dramatically enhancing mobility.

Original language	English
Article number	122106
Journal	Applied Physics Letters
Volume	103
Issue number	12
DOIs	https://doi.org/10.1063/1.4821546
Publication status	Published - Sept 16 2013

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.4821546

Cite this

Dramatic enhancement of low electric-field hole mobility in metal source/drain Ge p-channel metal-oxide-semiconductor field-effect transistors by introduction of Al and Hf into SiO₂/GeO₂ gate stack. / Yamamoto, Keisuke; Sada, Takahiro; Wang, Dong et al.
In: Applied Physics Letters, Vol. 103, No. 12, 122106, 16.09.2013.

Research output: Contribution to journal › Article › peer-review

@article{114bd849c1b1474680ec3864ef551e47,

title = "Dramatic enhancement of low electric-field hole mobility in metal source/drain Ge p-channel metal-oxide-semiconductor field-effect transistors by introduction of Al and Hf into SiO2/GeO2 gate stack",

abstract = "Ge p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) are fabricated using HfGe metal source/drain contacts and an Al/SiO 2/GeO2 gate stack. Following postmetallization annealing at 400 °C, the MOSFET shows peak field-effect mobility (μh) of 336 cm2/Vs. Insertion of a Hf layer between the Al and SiO 2 layers increases the peak μh to 919 cm 2/Vs, which is associated with a positive shift of threshold voltage. We propose a model involving compensation of positive interface trapped and oxide fixed charges by negative oxide fixed charges introduced by Al and Hf in the gate stack. This leads to a decrease in Coulomb scattering, dramatically enhancing mobility.",

author = "Keisuke Yamamoto and Takahiro Sada and Dong Wang and Hiroshi Nakashima",

note = "Funding Information: This work was supported by JSPS Grant-in-Aid (KAKENHI) for Scientific Research (A) Number 25249035 and for JSPS Fellows. The authors acknowledge the support from the Advanced Graduate Program in Global Strategy for Green Asia, Kyushu University, which is a program for leading graduate schools from the JSPS and MEXT, Japan.",

year = "2013",

month = sep,

day = "16",

doi = "10.1063/1.4821546",

language = "English",

volume = "103",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "12",

}

TY - JOUR

T1 - Dramatic enhancement of low electric-field hole mobility in metal source/drain Ge p-channel metal-oxide-semiconductor field-effect transistors by introduction of Al and Hf into SiO2/GeO2 gate stack

AU - Yamamoto, Keisuke

AU - Sada, Takahiro

AU - Wang, Dong

AU - Nakashima, Hiroshi

N1 - Funding Information: This work was supported by JSPS Grant-in-Aid (KAKENHI) for Scientific Research (A) Number 25249035 and for JSPS Fellows. The authors acknowledge the support from the Advanced Graduate Program in Global Strategy for Green Asia, Kyushu University, which is a program for leading graduate schools from the JSPS and MEXT, Japan.

PY - 2013/9/16

Y1 - 2013/9/16

N2 - Ge p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) are fabricated using HfGe metal source/drain contacts and an Al/SiO 2/GeO2 gate stack. Following postmetallization annealing at 400 °C, the MOSFET shows peak field-effect mobility (μh) of 336 cm2/Vs. Insertion of a Hf layer between the Al and SiO 2 layers increases the peak μh to 919 cm 2/Vs, which is associated with a positive shift of threshold voltage. We propose a model involving compensation of positive interface trapped and oxide fixed charges by negative oxide fixed charges introduced by Al and Hf in the gate stack. This leads to a decrease in Coulomb scattering, dramatically enhancing mobility.

AB - Ge p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) are fabricated using HfGe metal source/drain contacts and an Al/SiO 2/GeO2 gate stack. Following postmetallization annealing at 400 °C, the MOSFET shows peak field-effect mobility (μh) of 336 cm2/Vs. Insertion of a Hf layer between the Al and SiO 2 layers increases the peak μh to 919 cm 2/Vs, which is associated with a positive shift of threshold voltage. We propose a model involving compensation of positive interface trapped and oxide fixed charges by negative oxide fixed charges introduced by Al and Hf in the gate stack. This leads to a decrease in Coulomb scattering, dramatically enhancing mobility.

UR - http://www.scopus.com/inward/record.url?scp=84884870833&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84884870833&partnerID=8YFLogxK

U2 - 10.1063/1.4821546

DO - 10.1063/1.4821546

M3 - Article

AN - SCOPUS:84884870833

SN - 0003-6951

VL - 103

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

M1 - 122106

ER -

Dramatic enhancement of low electric-field hole mobility in metal source/drain Ge p-channel metal-oxide-semiconductor field-effect transistors by introduction of Al and Hf into SiO₂/GeO₂ gate stack

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this