Drastic change in electronic domain structures via strong elastic coupling in VO2 films

Takeaki Yajima, Yuma Ninomiya, Tomonori Nishimura, Akira Toriumi

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)

Abstract

We observed a drastic change in electronic domain structures during the metal-insulator transition (MIT) via strong elastic coupling in single crystalline VO2 films. The domain structure drastically changed from one type to another due to increasing elastic coupling with film thickness. This drastic change was caused by energetic competition between elastic coupling and structural disorder during the MIT, suggesting the microscopic stress engineering facilitate the electronic domain control in functional oxides.

Original languageEnglish
Article number205102
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume91
Issue number20
DOIs
Publication statusPublished - May 6 2015
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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