Drastic change in the GaN film quality by in-situ controlling surface reconstructions in GSMBE

X. Q. Shen, S. Tanaka, S. Iwai, Y. Aoyagi

Research output: Contribution to journalConference article

Abstract

GaN growth was perform on 6H-SiC (0001) substrates by gas-source molecular beam epitaxy (GSMBE), using ammonia (NH3) as a nitrogen source. Two kinds of reflection high-energy electron diffraction (RHEED) patterns, named (1×1) and (2×2), were observed during the GaN growth depending on the growth conditions. By careful RHEED study, it was verified that the (1×1) pattern was corresponded to a H2-related nitrogen-rich surface, while (2×2) pattern was resulted from a Ga-rich surface. By x-ray diffraction (XRD), photoluminescence (PL) and atomic force microscopy (AFM) characterizations, it was found that the GaN quality changed drastically grown under different RHEED patterns. GaN film grown under the (1×1) RHEED pattern showed much better qualities than that grown under the (2×2) one.

Original languageEnglish
Pages (from-to)223-226
Number of pages4
JournalMaterials Research Society Symposium - Proceedings
Volume482
Publication statusPublished - Dec 1 1997
Externally publishedYes
EventProceedings of the 1997 MRS Fall Meeting - Boston, MA, USA
Duration: Dec 1 1997Dec 4 1997

Fingerprint

Gas source molecular beam epitaxy
Reflection high energy electron diffraction
Surface reconstruction
high energy electrons
molecular beam epitaxy
electron diffraction
Diffraction patterns
diffraction patterns
gases
Nitrogen
nitrogen
Ammonia
ammonia
Atomic force microscopy
Photoluminescence
x ray diffraction
Diffraction
atomic force microscopy
photoluminescence
X rays

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Drastic change in the GaN film quality by in-situ controlling surface reconstructions in GSMBE. / Shen, X. Q.; Tanaka, S.; Iwai, S.; Aoyagi, Y.

In: Materials Research Society Symposium - Proceedings, Vol. 482, 01.12.1997, p. 223-226.

Research output: Contribution to journalConference article

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abstract = "GaN growth was perform on 6H-SiC (0001) substrates by gas-source molecular beam epitaxy (GSMBE), using ammonia (NH3) as a nitrogen source. Two kinds of reflection high-energy electron diffraction (RHEED) patterns, named (1×1) and (2×2), were observed during the GaN growth depending on the growth conditions. By careful RHEED study, it was verified that the (1×1) pattern was corresponded to a H2-related nitrogen-rich surface, while (2×2) pattern was resulted from a Ga-rich surface. By x-ray diffraction (XRD), photoluminescence (PL) and atomic force microscopy (AFM) characterizations, it was found that the GaN quality changed drastically grown under different RHEED patterns. GaN film grown under the (1×1) RHEED pattern showed much better qualities than that grown under the (2×2) one.",
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AU - Shen, X. Q.

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AB - GaN growth was perform on 6H-SiC (0001) substrates by gas-source molecular beam epitaxy (GSMBE), using ammonia (NH3) as a nitrogen source. Two kinds of reflection high-energy electron diffraction (RHEED) patterns, named (1×1) and (2×2), were observed during the GaN growth depending on the growth conditions. By careful RHEED study, it was verified that the (1×1) pattern was corresponded to a H2-related nitrogen-rich surface, while (2×2) pattern was resulted from a Ga-rich surface. By x-ray diffraction (XRD), photoluminescence (PL) and atomic force microscopy (AFM) characterizations, it was found that the GaN quality changed drastically grown under different RHEED patterns. GaN film grown under the (1×1) RHEED pattern showed much better qualities than that grown under the (2×2) one.

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