TY - GEN
T1 - Dry etching for Germanium waveguides by using CHF3 inductively coupled plasma
AU - Idris, Ahmad Syahrin
AU - Jiang, Haisong
AU - Hamamoto, Kiichi
N1 - Publisher Copyright:
© 2015 The Japan Society of Applied Physics.
Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.
PY - 2016/2/23
Y1 - 2016/2/23
N2 - Dry etching for Ge waveguide has been researched by using inductively coupled plasma technique with CHFj gas. It realizes a high selectivity of 5:1 against regular photoresist mask. Moreover, anisotropic etching without under-cut has been successfully realized with an etched siclewall angle of 85 degree with an etching rate of 190 nm/min.
AB - Dry etching for Ge waveguide has been researched by using inductively coupled plasma technique with CHFj gas. It realizes a high selectivity of 5:1 against regular photoresist mask. Moreover, anisotropic etching without under-cut has been successfully realized with an etched siclewall angle of 85 degree with an etching rate of 190 nm/min.
UR - http://www.scopus.com/inward/record.url?scp=84969584634&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84969584634&partnerID=8YFLogxK
U2 - 10.1109/MOC.2015.7416432
DO - 10.1109/MOC.2015.7416432
M3 - Conference contribution
AN - SCOPUS:84969584634
T3 - MOC 2015 - Technical Digest of 20th Microoptics Conference
BT - MOC 2015 - Technical Digest of 20th Microoptics Conference
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 20th Microoptics Conference, MOC 2015
Y2 - 25 October 2015 through 28 October 2015
ER -