Dry etching for Germanium waveguides by using CHF3 inductively coupled plasma

Ahmad Syahrin Idris, Haisong Jiang, Kiichi Hamamoto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Dry etching for Ge waveguide has been researched by using inductively coupled plasma technique with CHFj gas. It realizes a high selectivity of 5:1 against regular photoresist mask. Moreover, anisotropic etching without under-cut has been successfully realized with an etched siclewall angle of 85 degree with an etching rate of 190 nm/min.

Original languageEnglish
Title of host publicationMOC 2015 - Technical Digest of 20th Microoptics Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9784863485433
DOIs
Publication statusPublished - Feb 23 2016
Event20th Microoptics Conference, MOC 2015 - Fukuoka, Japan
Duration: Oct 25 2015Oct 28 2015

Other

Other20th Microoptics Conference, MOC 2015
CountryJapan
CityFukuoka
Period10/25/1510/28/15

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials

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    Idris, A. S., Jiang, H., & Hamamoto, K. (2016). Dry etching for Germanium waveguides by using CHF3 inductively coupled plasma. In MOC 2015 - Technical Digest of 20th Microoptics Conference [7416432] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/MOC.2015.7416432