DTMOS-IV: Rds(ON) innovation by deep-trench filling superjunction technology

Syotaro Ono, Hiroshi Ohta, Hiroaki Yamashita, Masaru Izumisawa, Wataru Saito, Shingo Sato, Noboru Matsuda, Yoshihisa Ohishi, Masataka Tsuji, Jun Onodera, Georges Tchouangue

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

We developed new generation 600V-class superjunction (SJ) MOSFETs: DTMOS-IV series, which have innovative lower on-state resistance (RDS(ON)) by deep-trench filling process. The 30% reduction of specific on-state resistance (RDS(ON).SP) was attained by 27% of SJ pitch narrowing as compared with the previous generation of DTMOS-III series. With this DTMOS-IV technology, the lowest RDS(ON) was updated in each package class. In addition, better power efficiency was shown in Power Factor Correction (PFC) application by adjustment of RDS(ON)*QGD designed to become compatible with DTMOS-iii aiming at switching noise reduction, and 12% of output capacitance reduction.

Original languageEnglish
Title of host publicationProceedings - PCIM Europe 2012
Subtitle of host publicationInternational Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
Pages128-131
Number of pages4
Publication statusPublished - Dec 1 2012
Externally publishedYes
EventInternational Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2012 - Nuremberg, Germany
Duration: May 8 2012May 10 2012

Publication series

NamePCIM Europe Conference Proceedings
ISSN (Electronic)2191-3358

Conference

ConferenceInternational Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2012
CountryGermany
CityNuremberg
Period5/8/125/10/12

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'DTMOS-IV: Rds(ON) innovation by deep-trench filling superjunction technology'. Together they form a unique fingerprint.

  • Cite this

    Ono, S., Ohta, H., Yamashita, H., Izumisawa, M., Saito, W., Sato, S., Matsuda, N., Ohishi, Y., Tsuji, M., Onodera, J., & Tchouangue, G. (2012). DTMOS-IV: Rds(ON) innovation by deep-trench filling superjunction technology. In Proceedings - PCIM Europe 2012: International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (pp. 128-131). (PCIM Europe Conference Proceedings).