Dual-electrode biasing for controlling ion-to-adatom flux ratio during ion-assisted deposition of diamond

Kungen Teii, Masaru Hori, Toshio Goto

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Abstract

A dual-bias method using a grid mesh inserted into the front of a substrate has been employed to control the ion-to-adatom flux ratio in an inductively coupled plasma for depositing crystalline materials preferring low-energy ion bombardment. The Langmuir probe measurements revealed that the ion flux toward the substrate decreased with increasing a positive substrate bias with the grid grounded, while it increased with increasing a positive grid bias with the substrate grounded. Ion energy analyses along the diffusing plasma stream by using a probe and a mass spectrometer revealed the contribution of a high-energy tail in the ion-energy distribution into the bombarding ion flux. The ion-assisted deposition of diamond at a pressure of 10 mTorr was performed at a bombarding ion energy as low as the drifting energy (∼several eV). The results indicate the need for optimizing the ion-to-adatom flux ratio for efficient migration and clustering of precursor adatoms yielding a high nucleation density over 109 cm-2.

Original languageEnglish
Pages (from-to)4714-4718
Number of pages5
JournalJournal of Applied Physics
Volume89
Issue number9
DOIs
Publication statusPublished - May 1 2001

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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